Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Substrate for ink jet head, ink jet head utilizing the same and producing method therefor

An inkjet head, substrate technology, applied in the direction of printing, etc., can solve problems such as hindering satisfactory recording or quality reliability, corrosion, etc.

Inactive Publication Date: 2006-02-08
CANON KK
View PDF2 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] However, in the case of making the ink discharge member elongated (to 0.5 inches or more) in order to achieve a higher recording speed or in the case of using a variety of inks containing additives in order to improve the light fastness or gas resistance of the ink on the recording medium In the case of this, due to the difference in the coefficient of linear expansion of the parts and the strain generated due to the stress in the resin layer constituting the wall of the liquid flow path or discharge port, and the influence of the new type of ink on the interface, resulting in the formation of Peeling phenomenon between the covering resin layer of the wall of the liquid flow path or discharge port and the upper protective layer on the heater substrate
In addition, even in the case where the organic adhesion promoting layer is provided on the upper protective layer, peeling at the interface between the organic adhesion promoting layer and the upper protective layer may be caused, causing the ink to stick to the substrate and causing wiring failure. Corrosion, thereby preventing satisfactory record or quality reliability over longer periods of time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Substrate for ink jet head, ink jet head utilizing the same and producing method therefor
  • Substrate for ink jet head, ink jet head utilizing the same and producing method therefor
  • Substrate for ink jet head, ink jet head utilizing the same and producing method therefor

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0068] In order to simply evaluate Ta in this example 88 Cr 12 The adhesion between the film 107 (refers to the film with the composition ratio of Ta88at.% and Cr12at.%; the composition is expressed in a similar manner below) and the organic adhesion promotion film (polyetheramide resin) 307, in the pressure cooker test ( PCT) followed by a tape peel test.

[0069] The tape peel test was performed in the following manner. On the silicon wafer bearing the upper protective layer 107, an organic adhesion promoting film (polyetheramide resin) 307 having a thickness of 2 μm is formed, and a dicing knife is used to apply 10 (longitudinal) x 10 (transverse) on the organic adhesion promoting film 307 )=100 squares in a checkerboard pattern to form a 1×1mm square. After passing at 121℃ and 2.0265×10 5 PCT is performed by immersing in alkaline ink for 10 hours under the condition of Pa (2atm.). After that, the tape was applied on the squares in the checkerboard pattern and peeled off, and a...

example 8

[0083] In this example, a silicon substrate or a silicon substrate in which a driver IC is formed is used as a sample for analyzing inkjet characteristics. In the case of a silicon substrate, SiO with a thickness of 1.8 μm is formed by a thermal oxidation method, a sputtering method, or a CVD method, etc. 2 Heat accumulation layer 102 ( figure 1 ), and the silicon substrate that already has IC also undergoes the formation of SiO during the preparation process 2 The process of heat accumulation layer.

[0084] After that, SiO with a thickness of 1.2μm is formed by sputtering method or CVD method, etc. 2 Interlayer insulating film 103. After that, a 50nm thick Ta was formed by a reactive sputtering method using a Ta-Si target. 40 Si 21 N 39 Heat generating resistor 104. This operation was performed at a substrate temperature of 200°C. Then, an Al film used as the metal wiring 105 was formed to a thickness of 200 nm by a sputtering method.

[0085] Next, patterning is performed by p...

example 17

[0107] In this example, the upper protective layer 107 has a double-layer structure, and in the heat-acting portion, a double-layer structure composed of an upper Ta layer 111 and a lower TaCr layer 112 is used, and under the flow path forming element 109, only It has a single-layer structure with a lower layer 112.

[0108] More specifically, it shows the use of Ta 80 Cr 20 A case where the lower film 112 as the upper protective layer 107 and the Ta film are used as the upper film 111 are used.

[0109] By using the binary sputtering of the Ta target and the Cr target to form a Ta with Ta on the insulating layer 80 Cr 20 Composition and 130nm thickness of the lower film 112. The conditions of binary sputtering were determined by analyzing the components in advance by changing the power for Ta sputtering and for Cr sputtering. In addition, instead of binary sputtering, sputtering of a TaCr alloy target having a previously known composition can also be performed.

[0110] Then, the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Membrane stressaaaaaaaaaa
Login to View More

Abstract

For improving adhesion between a protective layer having a portion coming into contact with ink in a substrate for an ink jet head, and a resin layer thereby ensuring reliability in quality over a prolonged period, the invention provides a substrate for an ink jet head including a heat-generating resistor constituting a heat generating portion, an electrode wiring electrically connected with the heat-generating resistor and an upper protective layer provided on the heat-generating resistor and the electrode wiring across an insulating protective layer, wherein after forming an upper protective layer in which a Ta layer is laminated on a layer formed by a TaCr alloy, said Ta layer is selectively patterned and selectively removed so that the liquid flow path member is formed in a portion where the layer formed by said TaCr alloy is exposed by said removing.

Description

Technical field [0001] The present invention relates to a substrate for an inkjet head for recording or printing characters, symbols, or images by discharging a functional liquid such as ink onto a recording medium including paper, plastic sheet, cloth, articles, etc.; using the substrate Inkjet head and its manufacturing method. Background technique [0002] A conventional structure of an inkjet head for inkjet recording includes a plurality of discharge ports, an ink flow channel connected to the discharge ports, and a plurality of electrothermal conversion elements capable of generating thermal energy for inkjet. The electrothermal conversion element is composed of a heat-generating resistor and an electrode that provides electrical energy for the heat-generating resistor, and the electrothermal conversion element is coated with an insulating film to ensure insulation between the respective electrothermal conversion elements. Each ink flow channel is connected to a common liqu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B41J2/05B41J2/16
Inventor 齐藤一郎横山宇尾崎照夫坂井稔康
Owner CANON KK
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products