Method for the production of a bipolar semiconductor component and corresponding bipolar semiconductor component

Abstract

A method for manufacturing a bipolar semiconductor element and the bipolar semiconductor element are disclosed. The method includes: providing a first semiconductor region of the first conductivity type on the semiconductor substrate; providing a connection region of the first conductivity type on the first semiconductor region; providing a first insulating region on the connection region; A window is formed in the connection region so as to at least partially expose the first semiconductor region; a sidewall spacer is provided in the window so as to insulate the terminal region; a second semiconductor region of the second conductivity type is provided so as to cover the sidewall spacer, and surrounding A part of the first insulating region; remove the surrounding first insulating region and the sidewall spacer to form a gap between the connection region and the second semiconductor region; and when sealing the gap by means of the second insulating region, at the The inside of the sealed gap is equipped with a gas atmosphere or a vacuum atmosphere.

Description

technical field [0001] The invention relates to a method for producing a bipolar semiconductor component, in particular a bipolar transistor, and to a corresponding bipolar semiconductor component. Background technique [0002] In order to be able to electrically insulate the emitter and base terminal regions from each other in bipolar transistors, two methods are available in principle: first, the use of photolithography to define the terminals of the emitter and base regions area, and pattern the terminal area by means of etching techniques. Therefore, such transistors are called aligned transistors. Next, the distance between the emitter and base terminals is given by the minimum available lithographic width. Since photolithographic methods are only capable of 1.0 μm resolution, this approach is not suitable for scaled transistors, where the emitter is only a few 0.1 μm wide and the insulating region between the emitter and base may even will be significantly narrower ...

AI Technical Summary

Problems solved by technology

Aligning transistors is therefore not suitable for modern scaled, high performance transistors

Images