Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for the production of a bipolar semiconductor component and corresponding bipolar semiconductor component

A bipolar transistor and semiconductor technology, applied in the field of bipolar transistors and bipolar semiconductor components, can solve the problem that transistors are not suitable for high-performance transistors, and achieve the effect of improving electrical characteristics

Inactive Publication Date: 2006-05-10
INFINEON TECH AG
View PDF1 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Aligning transistors is therefore not suitable for modern scaled, high performance transistors

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for the production of a bipolar semiconductor component and corresponding bipolar semiconductor component
  • Method for the production of a bipolar semiconductor component and corresponding bipolar semiconductor component
  • Method for the production of a bipolar semiconductor component and corresponding bipolar semiconductor component

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The idea on which the invention is based begins with Figure 3C . It is known that the emitter and base electrodes 60, 40 of the DPSA transistor and the intervening dielectric of the spacer 55' form a capacitor whose capacitance Csp increases the emitter-base capacitance CBE of the transistor. The latter is one of the most important performance-determining variables for bipolar transistors. Therefore, the following equations apply, e.g. for the transition frequency of a bipolar transistor:

[0029] 1 2 π f T = τ f + ( R C + R E ) C BC + C BE ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for manufacturing a bipolar semiconductor element and the bipolar semiconductor element are disclosed. The method includes: providing a first semiconductor region of the first conductivity type on the semiconductor substrate; providing a connection region of the first conductivity type on the first semiconductor region; providing a first insulating region on the connection region; A window is formed in the connection region so as to at least partially expose the first semiconductor region; a sidewall spacer is provided in the window so as to insulate the terminal region; a second semiconductor region of the second conductivity type is provided so as to cover the sidewall spacer, and surrounding A part of the first insulating region; remove the surrounding first insulating region and the sidewall spacer to form a gap between the connection region and the second semiconductor region; and when sealing the gap by means of the second insulating region, at the The inside of the sealed gap is equipped with a gas atmosphere or a vacuum atmosphere.

Description

technical field [0001] The invention relates to a method for producing a bipolar semiconductor component, in particular a bipolar transistor, and to a corresponding bipolar semiconductor component. Background technique [0002] In order to be able to electrically insulate the emitter and base terminal regions from each other in bipolar transistors, two methods are available in principle: first, the use of photolithography to define the terminals of the emitter and base regions area, and pattern the terminal area by means of etching techniques. Therefore, such transistors are called aligned transistors. Next, the distance between the emitter and base terminals is given by the minimum available lithographic width. Since photolithographic methods are only capable of 1.0 μm resolution, this approach is not suitable for scaled transistors, where the emitter is only a few 0.1 μm wide and the insulating region between the emitter and base may even will be significantly narrower ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/732H01L21/331H01L29/06H01L29/737
CPCH01L29/0649H01L29/66242H01L29/66287H01L29/732H01L29/7378H01L29/7317
Inventor 约瑟夫·伯克托马斯·迈斯特赖因哈德·施滕格尔希尔伯特·舍费尔
Owner INFINEON TECH AG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com