Semiconductor device and manufacturing method therefor
a technology of semiconductors and semiconductors, applied in semiconductor/solid-state device manufacturing, basic electric elements, electric devices, etc., can solve problems such as degrading the reliability of gate insulation films or the like, and achieve the effect of easy silicid
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
Problems solved by technology
Method used
Image
Examples
first embodiment
[0041]FIG. 1 to FIG. 4 are cross-sectional diagrams showing a flow of a method of manufacturing a semiconductor device according to a first embodiment of the present invention. For convenience sake, these diagrams show one full silicide MOSFET and one normal silicide MOSFET, respectively. In actual practice, many full silicide MOSFETs and many normal silicide MOSFETs are formed on a silicon substrate. For example, it is considered to employ a full silicide MOSFET for a core circuit part of a semiconductor device and employ a normal silicide MOSFET for a peripheral circuit part. As a result, since a leak current through the gate insulation film decreases, the semiconductor device possesses higher reliability. A full silicide MOSFET may be employed for a logic part of a semiconductor device and a normal silicide MOSFET may be employed for an analog part. As a result, since threshold voltages of the transistors become lower, the operation speed of the semiconductor device increases.
[0...
second embodiment
[0058]FIG. 8 to FIG. 10 are cross-sectional diagrams showing a flow of a method of manufacturing a semiconductor device according to a second embodiment of the present invention. First, the configuration as shown in FIG. 1 is obtained in a process similar to that according to the first embodiment. Next, the photoresist 90 is coated as a mask material on the first and the second gate electrodes 40 and 42. As shown in FIG. 8, the photoresist 90 is patterned to expose the upper surface of the second gate electrode 42 while keeping the first gate electrode 40 covered with the photoresist 90. Nitrogen ions are implanted into the second gate electrode 42 using the photoresist 90 as a mask, for example. As a result, a nitrogen-implanted layer 43 that is less easily silicided than polysilicon is formed as a silicidation restricting layer inside the second gate electrode 42. The nitrogen-implanted layer 43 is provided between the polysilicon layer 41 and the polysilicon layer 45. As explaine...
third embodiment
[0062]FIG. 11 to FIG. 13 are cross-sectional diagrams showing a flow of a method of manufacturing a semiconductor device according to a third embodiment of the present invention. First, the configuration as shown in FIG. 1 is obtained in a process similar to that according to the first embodiment. Next, the photoresist 90 is coated as a mask material on the first and the second gate electrodes 40 and 42, respectively. As shown in FIG. 11, the photoresist 90 is patterned to expose the upper surface of the first gate electrode 40 while keeping the second gate electrode 42 covered with the photoresist 90. Germanium ions or silicon ions are implanted into the first gate electrode 40 using the photoresist 90 as a mask. As a result, polysilicon on the upper part of the first gate electrode 40 becomes amorphous silicon. With this arrangement, the first gate electrode 40 has a two-layer configuration including the amorphous silicon layer 49 and a polysilicon layer 48.
[0063] After the photo...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More