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Light emission from semiconductor integrated circuits

a technology of integrated circuits and semiconductors, applied in the direction of semiconductor devices, basic electric elements, electrical appliances, etc., can solve the problems of complex device integration, difficult and expensive formation of single crystal direct semiconductor integrated circuits into integrated structures, and inability to meet the requirements of light emission

Inactive Publication Date: 2006-10-26
EPIR TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While silicon has been a wonderful material for integrated electronic as well as micromechanical structures, silicon is not a material suitable for light emission.
Light emission to and from integrated structures is increasingly important as device integration becomes denser and more complex.
Single crystal direct semiconductor integrated circuits have proven to be more difficult and expensive to form into integrated structures, so silicon integrated circuits are the technology of choice.
Attempts to integrate light emission with the silicon technology have not met with a great deal of success.
This technique, however, requires difficult and expensive tips to be formed and does not combine well with the silicon integrated circuit technology.

Method used

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  • Light emission from semiconductor integrated circuits
  • Light emission from semiconductor integrated circuits

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Embodiment Construction

[0021] Referring to FIG. 1, in a preferred embodiment of a light emitting device or integrated circuit 10 according to the present invention, a light emitting layer or film 12 comprising a direct bandgap semiconductor material such as GaInP is deposited on an insulating oxide layer or film 14, such as SiO2, which covers an electron emitting layer or film 16 such as polysilicon.

[0022] The GaInP may be deposited by evaporation, sputter deposition, or organometallic vapor phase epitaxy, for example, as is known in the art. The GaInP will not then be single crystal when deposited on the SiO2 surface, but such material is suitable to convert electrons emitted from the polysilicon and injected into the GaInP into direct bandgap radiation [1]. The radiation from the GaInP creates light emission from the silicon that may be used for optical communication within the integrated circuit chip or off the chip, between chips in a three dimensional configuration (such as described in my copending...

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Abstract

Structures and methods to inject electrons into an insulator from a semiconductor layer that are then collected in a thin layer of a direct semiconductor material which in turn emits light by bandgap recombination.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is a continuation of copending application Ser. No. 10 / 033,715, incorporated herein by reference in its entirety, which claims priority from U.S. provisional application Ser. No. 60 / 259,060, filed on Dec. 28, 2000, incorporated herein by reference in its entirety.STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT [0002] Not Applicable REFERENCE TO A COMPUTER PROGRAM APPENDIX [0003] Not Applicable BACKGROUND OF THE INVENTION [0004] 1. Field of the Invention [0005] This invention pertains generally to light emitting devices, and more particularly to structures and methods to inject electrons from a semiconductor surface, through an insulator layer, and into a layer of optoelectronic material placed on the insulator layer. [0006] 2. Description of the Background Art [0007] The following publications, some of which are referred to herein using their corresponding number inside a square bracket (e.g., [1]), are ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L33/00
CPCH01L49/00H01L33/0004H10N99/00
Inventor BOWER, ROBERT W.
Owner EPIR TECH INC