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Phase Change Materials for Applications that Require Fast Switching and High Endurance

a phase change and fast switching technology, applied in the direction of bulk negative resistance effect devices, semiconductor devices, electrical devices, etc., can solve the problems of relatively long time required for reading or writing data from or to flash memory devices, and the general configuration of random access memory devices not generally configured as random access memory devices, etc., to achieve high endurance and high resistivity

Inactive Publication Date: 2009-09-17
GLOBALFOUNDRIES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, flash memory devices are not generally configured as random access memory devices.
In addition, flash memory devices are disadvantageous in that the time required for reading or writing data from or to such devices may be relatively long.

Method used

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  • Phase Change Materials for Applications that Require Fast Switching and High Endurance
  • Phase Change Materials for Applications that Require Fast Switching and High Endurance
  • Phase Change Materials for Applications that Require Fast Switching and High Endurance

Examples

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[0052]A phase change composition is prepared by forming a thin film by deposition of said film on silicon wafer substrate through the co-sputtering of germanium and antimony in the presence of a gaseous mixture of argon and nitrogen. The silicon substrate is previously coated with a layer of silicon oxide at a thickness of about one micrometer. The composition of the thin film is determined by means such as Rutherford Back Scattering Analysis. The film contains a solid solution of antimony and germanium. The content of the germanium is about 8% based on atomic ratio. Resistivity as a function of temperature is then measured by forming two contacts on the sample, the contacts having well-defined geometry. The resistivity between these contacts is then measured while heating the sample in a nitrogen atmosphere to prevent oxidation. The resistivity is about 0.01 ohms / cm.

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Abstract

A memory device utilizing a phase change material as the storage medium, the phase change material based on antimony as the solvent in a solid solution; wherein the memory device further includes a means for heating the phase change material.

Description

[0001]The present application is a continuation application based on previously filed application Ser. No. 12 / 047459, filed on Mar. 13, 2008.[0002]The present invention relates to a solid solution phase change material, and more particularly, to a nonvolatile memory device employing a solid solution phase change material as the memory element.BACKGROUND OF THE INVENTION[0003]Phase change materials (PCMs) undergo fast reversible phase changes in response to an external stimulus, such as heat. The phase change is associated with a change in a physical property, such as electrical resistance or optical reflectivity, which can be measured to determine the phase of the material. PCMs are typically switched between a largely amorphous state and a largely crystalline state. The amorphous state is characterized by a higher electrical resistance than the crystalline state. Switching between these two states generates a reversible difference in electrical resistance that can be harnessed for ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L47/00
CPCH01L45/06H01L45/1625H01L45/148H01L45/1233H10N70/231H10N70/884H10N70/026H10N70/826
Inventor SCHROTT, ALEJANDRO G.LAM, CHUNG H.RAOUX, SIMONECHEN, CHIEH-FANG
Owner GLOBALFOUNDRIES INC