Manufacturing method of semiconductor device to uniformly form thickness of gate insulating layer
a manufacturing method and technology applied in semiconductor devices, electrical devices, transistors, etc., can solve the problem of uneven thickness of gate insulating layer, and achieve the effect of preventing the failure of the operation of the semiconductor devi
Active Publication Date: 2019-04-25
HYUNDAI MOTOR CO LTD +1
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Benefits of technology
[0011]According to an exemplary embodiment of the present disclosure, a more uniform a thickness of a gate insulating layer may be formed by performing a first etching process, a first thermal oxidation process, a second etching process, and a second thermal oxidation process. Accordingly, an operation failure of a semiconductor device may be prevented.
Problems solved by technology
However, during the thermal oxidation process, a thickness of the gate insulating layer may be unevenly formed due to a difference in oxidation rate between the lateral surface and the bottom surface of the trench.
Method used
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[0015]The present disclosure will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the disclosure are shown. However, it is to be understood that the disclosure is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present disclosure.
[0016]In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” another element, it can be directly on the other element or intervening elements may also be present.
[0017]It will be further understood that the terms “comprises” and / or “comprising,” when used in this specification, specify the presence of stated fe...
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A manufacturing method of a semiconductor device is provided. The method includes sequentially forming an n− type of layer, a p type of region, and an n+ type of region on a first surface of a substrate, forming a preliminary trench in the n− type of layer by a first etching process and forming a preliminary gate insulating layer by a first thermal oxidation process. The method includes etching the lower surface of the preliminary trench and the preliminary second portion to form a trench by a second etching process and forming a gate insulating layer in the trench by a second thermal oxidation process. The gate insulating layer includes a first and second portion. The preliminary first portion is thicker than the preliminary second portion and the first portion. The first portion thickness is equal to the thickness of the second portion.
Description
CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims priority to and the benefit of Korean Patent Application No. 10-2017-0136004 filed on Oct. 19, 2017, the entire contents of which are incorporated herein by reference.BACKGROUND(a) Technical Field of the Disclosure[0002]The present disclosure relates to a manufacturing method of a semiconductor device, and more particularly, to a method that may uniformly form a thickness of a gate insulating layer of a trench gate MOSFET.(b) Description of the Related Art[0003]Recently, technological development trends have generated an interest in large-sized and large-capacity application apparatuses, a power semiconductor device having a high breakdown voltage, a high current capacity, and high-speed switching characteristics have become necessary. Typically, a power semiconductor device, a low on-resistance or a low saturated voltage is required to reduce power loss in a conduction state when a substantial amount of current flo...
Claims
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IPC IPC(8): H01L29/66H01L29/423H01L21/3065H01L21/308
CPCH01L29/66666H01L21/308H01L21/3065H01L29/4236H01L21/02236H01L21/02255H01L29/1608H01L29/66068H01L29/7813H01L29/66734H01L29/42364H01L21/049H01L29/66045
Inventor JUNG, YOUNGKYUNJOO, NACKYONGPARK, JUNGHEENOH, HYUN WOOLEE, JONGSEOKCHUN, DAE HWAN
Owner HYUNDAI MOTOR CO LTD