Unlock instant, AI-driven research and patent intelligence for your innovation.

Data receiving device, a semiconductor apparatus, and a semiconductor system using the data receiving device

a data receiving device and data technology, applied in the field of integrated circuit technology, can solve the problems of reducing the operation speed shortening the product life of the semiconductor apparatus, and deteriorating of the semiconductor apparatus

Active Publication Date: 2021-08-05
SK HYNIX INC
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0005]In an embodiment, a data receiving device may include a clock receiver, a first data receiver, and a second data receiver. The clock receiver may be configured to generate a first reception clock signal and a second reception clock signal from a clock signal and a complementary clock signal based on a switching enable signal. The clock receiver may be configured to change a logic level of the first reception clock signal when a logic level of the switching enable signal transitions. The first data receiver may be configured to compare data with a reference voltage in synchronization with the first reception clock signal to generate first internal data. The second data receiver may be configured to compare the data with the reference voltage in synchronization with the second reception clock signal to generate second internal data and may compensate for a voltage level change of the reference voltage based on the switching enable signal.

Problems solved by technology

As transistor-based semiconductor apparatus becomes miniaturized, the semiconductor apparatus may easily deteriorate.
BTI may raise a threshold voltage and thus may decrease an operation speed of a semiconductor apparatus and shorten the product life of the semiconductor apparatus.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Data receiving device, a semiconductor apparatus, and a semiconductor system using the data receiving device
  • Data receiving device, a semiconductor apparatus, and a semiconductor system using the data receiving device
  • Data receiving device, a semiconductor apparatus, and a semiconductor system using the data receiving device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018]FIG. 1 is a diagram illustrating configuration of a data receiving device 100 in accordance with an embodiment. Referring to FIG. 1, the data receiving device 100 may receive data DQ1:n> and a clock signal CLK. The data receiving device 100 may receive the data DQ1:n> in synchronization with the clock signal CLK to generate an internal data signal. The data DQ1:n> may be one data stream including a plurality of data signals. The plurality of data signals may be serially and consecutively transmitted through one data transmission line. The data DQ1:n> may include n number of data signals, where n is an integer equal to or greater than 2. The data DQ1:n> may be a single-ended signal. The data receiving device 100 may utilize a reference voltage VREF in order to receive the data DQ1:n> transmitted as a single-ended signal. The reference voltage VREF may have a voltage level corresponding to a middle of a range that the data DQ1:n> swings. Edges of the clock signal CLK may be sync...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A data receiving device includes a clock receiver and a plurality of data receivers. The clock receiver is configured to generate a plurality of internal clock signals from a clock signal and a complementary clock signal based on a switching enable signal. The plurality of data receivers are configured to receive data and a reference voltage and compare the data with the reference voltage in synchronization with the plurality of internal clock signals, respectively, to generate first internal data. Among the plurality of data receivers, a data receiver receiving an internal clock signal, of which a logic level transitions signals when a logic level of the switching enable signal transitions, is configured to change a voltage level of the reference voltage when the logic level of the switching enable signal transitions.

Description

CROSS-REFERENCES TO RELATED APPLICATION[0001]The present application claims priority under 35 U.S.C. § 119(a) to Korean application number 10-2020-0010948, filed on Jan. 30, 2020, in the Korean Intellectual Property Office, which is incorporated herein by reference in its entirety as set forth in full.BACKGROUND1. Technical Field[0002]Various embodiments relate to an integrated circuit technology and, more particularly, to a data receiving device and a semiconductor apparatus and a semiconductor system using the same.2. Related Art[0003]An electronic device includes many electronic elements, and a computer system includes many semiconductor apparatuses each including a semiconductor. Semiconductor apparatuses configuring a computer system may communicate with each other by receiving and transmitting data and a clock signal. The semiconductor apparatuses may operate in synchronization with a clock signal. The semiconductor apparatuses may output data in synchronization with a clock s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): G11C11/4076G11C11/4074G11C11/4099G11C11/4093G11C8/18
CPCG11C11/4076G11C11/4074G11C8/18G11C11/4093G11C11/4099G11C7/222G11C7/1084G11C7/1093G11C7/225G11C7/1078G11C5/147G11C7/22
Inventor LEE, DOO BOCKCHOI, YONG SUK
Owner SK HYNIX INC