Pitcher-shaped active area for field effect transistor and method of forming same

Abstract

An improved pitcher-shaped active area for a field effect transistor that, for a given gate length, achieves an increase in transistor on-current, a decrease in transistor serial resistance, and a decrease in contact resistance. The pitcher-shaped active area structure includes at least two shallow trench insulator (STI) structures formed into a substrate that defines an active area structure, which includes a widened top portion with a larger width than a bottom portion. An improved fabrication method for forming the improved pitcher-shaped active area is also described that implements a step to form STI structure divots followed by a step to migrate substrate material into at least portions of the divots, thereby forming a widened top portion of the active area structure. The fabrication method of present invention forms the pitcher-shaped active area without the use of lithography, and therefore, is not limited by the smallest ground rules of lithography tooling.

Description

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AI Technical Summary

Benefits of technology

The present invention provides an improved design for a field effect transistor (FET) that increases the amount of current it can handle, reduces resistance, and simplifies the process of connecting to other components in an integrated circuit. This is achieved by widening the top parts of the active area without changing the length of the gate. This design helps maintain the benefits of a wider active area while also increasing the on-current of the transistor.

Problems solved by technology

The technical problem addressed in this patent text relates to improving the efficiency and functionality of semiconductor devices, particularly field effect transistors (FETs), through the development of an enhanced active area structure that can increase transistor on-current while minimizing serial resistance and contact resistance. This will require overcoming limitations related to conventionally patterned openings for the active areas of FETs, including restricted access due to small ground rules and uneven electrostatic fields resulting in lower thresholds at the edges of the active area.

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