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Voltage boosting in MRAM current drivers

a current driver and voltage boost technology, applied in the field of magnetic random access memory (mram), can solve the problems of adversely affecting the total die size, adversely affecting the die size and cost, and achieve the effect of small form factor

Active Publication Date: 2013-03-19
III HLDG 1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, M3 has to be drawn in a layout to fit in relatively small pitch of a memory bit cell, and a large M3 size adversely affects total die size.
There are multiple such M10 transistors, one for each row / column, therefore a large of M10 size would adversely affect die size and cost.

Method used

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  • Voltage boosting in MRAM current drivers
  • Voltage boosting in MRAM current drivers
  • Voltage boosting in MRAM current drivers

Examples

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Embodiment Construction

[0020]In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the disclosure. It will be apparent, however, to one skilled in the art, that the disclosure may be practiced without these specific details. In other instances, structures and devices are shown at block diagram form only in order to avoid obscuring the disclosure.

[0021]Reference in this specification to “one embodiment” or “an embodiment” means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the disclosure. The appearances of the phrase “in one embodiment” in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Moreover, various features are described which may be exhibited by some embodiments and not by others. Sim...

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Abstract

A current driving mechanism for a magnetic memory device, comprising: a) a current driver circuit; and b) a current decoding block coupled to the current driver circuit, wherein the current decoding block comprises a transistor (M18) to control driver currents from the current driver circuit, and wherein the transistor (M18) has a smaller form factor then otherwise possible by virtue of maintaining a gate thereof at a negative voltage.

Description

[0001]This invention claims the benefit of priority to provisional patent application U.S. 61 / 231,681 filed Aug. 6, 2009.TECHNICAL FIELD OF THE DISCLOSURE[0002]Embodiments of the present invention relate to magnetic random access memory (MRAM).BACKGROUND OF THE DISCLOSURE[0003]In MRAM memory devices, current drivers are used to pass pre-determined current levels to selected rows and columns. As shown in FIG. 1, a typical implementation may include a pair of word line current drivers. Specifically, a word line current driver 11 of the pair of current drivers is shown on left and another word line current driver 12 of the pair of current drivers is shown on right of the FIG. 1. One pair of such word line current drivers is used for each word line as shown in FIG. 1. Further, a bit line current driver 13 is used on top and another bit line current driver 14 is used at bottom, as shown in FIG. 1. Specifically, a pair of such bit line current drivers is used for each bit line as shown in...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): G11C8/00
CPCG11C11/16G11C5/145G11C8/08
Inventor MANI, KRISHNAKUMARGUPTA, ANIL
Owner III HLDG 1