This invention belongs to the field of wet electronic chemicals technology, specifically relating to a method for preparing electronic-grade
hydrogen peroxide. The method includes the following steps: adjusting the concentration of raw
hydrogen peroxide, and then filtering it sequentially through a
reverse osmosis membrane, a modified cation exchange resin, an anion exchange resin, and a mixed
ion exchange resin to obtain electronic-grade
hydrogen peroxide. The modified cation exchange resin used is modified based on conventional cation exchange resin through pore expansion and
grafting, optimizing the spatial matching of pore structure and functional sites. This achieves
passivation of
metal ions, enhanced adsorption capacity, and improved
oxidation resistance, as well as a deep synergistic effect of these three effects. Ultimately, it achieves the dual goals of efficient purification and stable operation of the resin in the
hydrogen peroxide system. The resulting electronic-grade
hydrogen peroxide can reduce the content of single
impurity metal ions to below 5 ppt, meeting the requirements of SEMI G5 standards, and can be directly applied to high-end manufacturing fields such as
semiconductor wafer cleaning.