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Method and equipment for manufacturing semiconductor device

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as oxidation and deterioration of copper wiring

Inactive Publication Date: 2007-10-10
FUJITSU MICROELECTRONICS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Oxidation or deterioration of the surface of the copper wiring due to the residue may occur

Method used

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  • Method and equipment for manufacturing semiconductor device
  • Method and equipment for manufacturing semiconductor device
  • Method and equipment for manufacturing semiconductor device

Examples

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Embodiment Construction

[0014] Referring to FIGS. 1 to 3 , a method of manufacturing a semiconductor device according to an embodiment of the present invention will be described.

[0015] As shown in FIG. 1 , an active region is divided by an element isolation insulating film 2 formed on the surface of a semiconductor substrate 1 formed of silicon. A MOS transistor 3 having a source region 3S, a drain region 3D, and a gate electrode 3G is formed on the surface of the active region.

[0016] An interlayer insulating film 4 made of phosphosilicate glass (PSG) is formed on the upper surface of the semiconductor substrate 1 so as to cover the MOS transistor 3 . The interlayer insulating film 4 is a film obtained by depositing a PSG film with a thickness of about 1.5 μm by chemical vapor deposition (CVD) at 600° C., and then planarizing the surface by chemical mechanical polishing (CMP).

[0017] A protective film 5 made of silicon nitride and having a thickness of 50 nm is formed on the upper surface of...

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Abstract

A method of manufacturing a semiconductor device, comprising the steps of washing the surface of a substrate having insulation areas and metal areas exposed to the surface by using organic cleaning solvent, and radiating ultraviolet ray on the surface of the washed substrate, whereby the accumulation of a residue on the surface of the substrate can be suppressed.

Description

technical field [0001] The present invention relates to a manufacturing method and manufacturing device of a semiconductor device, in particular to a manufacturing method and a manufacturing device of a semiconductor device in which wiring is formed by embedding metal in a recess formed on an insulating film. Background technique [0002] In recent years, as the speed of semiconductor integrated circuit devices (LSIs) has increased, delays in electrical signals transmitted through wires connecting electronic circuits in a chip have become an obstacle to further speeding up LSIs. In addition, improvement of wiring reliability is also an important issue, and copper (Cu) is attracting attention as a wiring material replacing conventional aluminum (Al). When copper is used as the wiring material, a damascene method is used for reasons such as difficulty in etching the copper film. [0003] A conventional method of forming copper wiring by the damascene method will be briefly de...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/304H01L21/00H01L21/02H01L21/321
CPCH01L21/67115H01L21/02074H01L21/3212H01L21/67034H01L21/67051
Inventor 堀内博志柄泽章孝宫岛基守山本保
Owner FUJITSU MICROELECTRONICS LTD