Method and circuit for driving electronic emitting device, electronic source and iamge forming device
An electron emission device and electron emission technology, which are applied in the direction of circuits, discharge tube main electrodes, discharge tube electron guns, etc., can solve problems such as reducing image contrast, and achieve the effect of suppressing electron emission and high performance.
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no. 1 example
[0220] Figure 1A and 1B 6 is a plan view and a cross-sectional view of the electron-emitting device of the first embodiment, and FIG. 6 shows a method of manufacturing the device. A method of manufacturing the electron emission device of this example is described in detail below.
[0221] (step 1)
[0222] First, if Figure 6A As shown, the substrate 1 was prepared by sufficiently cleaning the quartz glass. Next, a Ta thin film with a thickness of 300 nm was formed as the cathode electrode 2 by a sputtering method.
[0223] (step 2)
[0224] Next, if Figure 6B As shown, an insulating layer 3 and a gate electrode 4 are stacked in sequence, wherein the insulating layer 3 is SiO with a thickness of 600 nm 2 thin film, the gate electrode 4 is a Ta thin film with a thickness of 100 nm.
[0225] (step 3)
[0226] Then, if Figure 6C As shown, a photomask pattern of a positive photoresist (AZ1500 manufactured by Clariant) was formed by spin coating, exposed to light, and ...
no. 2 example
[0240] Another control method of the present invention is described in this embodiment.
[0241] As in the first embodiment, the electron-emitting device shown in FIG. 1 is also used in this embodiment. However, the distance H between the device and the anode electrode 7 was set to 1 mm, and the anode electrode voltage Va was set to 15 KV in this embodiment.
[0242] In this example execute Figure 2B control operation shown. In addition, as the second comparative example, the voltages V1 and V2 can be set to 15V and 0V, respectively, like the first comparative example described in the first embodiment.
[0243] With this structure of this example, the electric field strength between the device and the anode electrode 7 is three times that of the first embodiment.
[0244] If the voltage V2 is set to 2V as in the first embodiment, the electron emission current Ie remains in the OFF period. Therefore, the voltage V2 is set to 4V. On the other hand, even if the voltage V1 i...
no. 3 example
[0250] In this embodiment, the image forming apparatus shown in FIG. 9 is constructed using an electron source including a plurality of electron emission devices of the second embodiment, wherein the Figure 7 The shown matrix way wires the plurality of electron emission devices. In addition, in the device formed Figure 11 The drive circuit shown and runs the control operation shown in Figure 12. The voltages Vx1, Vx2, and Vy1 are set to 4V, 20V, and 16V, respectively. In addition, like the second embodiment, as a third comparative example, the voltages V1 and V2 are set to 16V and 0V, respectively, and the voltages Vg and Vc in the OFF stage are both set to 0V. In order to compare Control devices with passive matrix configuration.
[0251] The electron-emitting devices may be arranged such that both the X-direction interval and the Y-direction interval are set to 150 μm. A fluorescent film 74 is provided on the device. In the third comparative example, the contrast was ...
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