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Method for manufacturing cross array structure orgnaic devices by self-assembling technique

An array structure, organic technology, which is applied in the field of preparation of cross-line array structure organic molecular devices, can solve the problems of unfavorable device performance, damage, improvement, etc.

Active Publication Date: 2008-07-02
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current manufacturing process of the cross-wire structure is generally to first prepare the lower electrode, then grow the organic material, and finally complete the preparation of the upper electrode. In the preparation process of the upper electrode, pollution will be introduced and the organic material will be damaged, and the processing is relatively difficult. Large, and not conducive to the improvement of device performance

Method used

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  • Method for manufacturing cross array structure orgnaic devices by self-assembling technique
  • Method for manufacturing cross array structure orgnaic devices by self-assembling technique
  • Method for manufacturing cross array structure orgnaic devices by self-assembling technique

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Experimental program
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Embodiment Construction

[0017] Picture 1-1 As shown, an insulating film 102 is deposited on the surface of a substrate 101, and the insulating film 102 can be obtained by various methods such as chemical vapor deposition or physical vapor deposition.

[0018] Figure 1-2 As shown, the resist is spin-coated on the surface of the insulating film 102, and developed by photolithography to obtain the upper electrode pattern 103 of the resist. The methods include optical lithography and electron beam lithography.

[0019] Figure 1-3 As shown, the upper electrode 104 is obtained by evaporating or sputtering metal, and ultrasonically peeling off with acetone, ethanol, and deionized water.

[0020] Figure 1-4 As shown, the upper electrode 105 is obtained by spin-coating resist, photolithography, development, metal evaporation, and stripping.

[0021] Figure 1-5 As shown, the organic material 106 is grown by a liquid phase method.

[0022] Figure 1-6 As shown in the top view, plasma dry etching is ...

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Abstract

The invention is a cross-wire array structured organic molecular device making method, comprising the steps of: 1. depositing an insulating film on a substrate; 2. smearing resist on the surface of the insulating film and photoetching to obtain bottom electrode figure; 3. evaporating and peeling off metal and obtaining cross-wire bottom electrode; 4. smearing resist and photoetching to obtain a top electrode figure crossing the bottom electrode; 5. evaporating and peeling off metal and obtaining top electrode; 6. self-organizing to grow organic molecular material by liquid phase process; and 7. dry-etching superfluous organic molecular material to complete the making of a cross-wire organic molecular device.

Description

technical field [0001] The invention belongs to the field of microfabrication in microelectronics and molecular electronics, and particularly relates to a preparation method of an organic molecular device with a cross-line array structure. Background technique [0002] As the feature size of large-scale integrated circuits enters the nanometer level, the traditional silicon-based integrated circuit technology is facing challenges, and the research on new materials and new structures has become a hot spot. Molecular electronic devices, one of the branches of nanoelectronics, are booming. FET and cross-wire are currently the main structures of molecular electronic devices, and the cross-wire structure is beneficial to integration and has attracted extensive attention. The current manufacturing process of the cross-wire structure is generally to first prepare the lower electrode, then grow the organic material, and finally complete the preparation of the upper electrode. In the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/82H01L21/28H01L51/40
Inventor 王丛舜胡文平涂德钰姬濯宇刘明
Owner SEMICON MFG INT (SHANGHAI) CORP