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Boron phosphide-based compound semiconductor device, production method thereof and light-emitting diode

A technology of nitride semiconductor and boron phosphide, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve problems such as leakage current reduction

Inactive Publication Date: 2008-07-16
RESONAC HOLDINGS CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, at present, it is difficult to stably obtain a pn junction structure of a Group III nitride semiconductor layer and a boron phosphide layer that reduces leakage current and exhibits good rectification characteristics.

Method used

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  • Boron phosphide-based compound semiconductor device, production method thereof and light-emitting diode
  • Boron phosphide-based compound semiconductor device, production method thereof and light-emitting diode
  • Boron phosphide-based compound semiconductor device, production method thereof and light-emitting diode

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Embodiment Construction

[0053] The present invention will be described in detail below.

[0054] Boron Phosphide Based Compound Semiconductor Devices

[0055] The boron phosphide-based compound semiconductor device of the present invention has a heterojunction structure including a group III nitride semiconductor layer and a boron phosphide layer, and the device is characterized in that the crystal of the group III nitride semiconductor layer and the boron phosphide layer feature.

[0056] The Group III nitride semiconductor layer as the substrate of the boron phosphide layer is suitably composed of the composition formula Al X Ga Y In Z Compounds represented by N (0≤X, Y, Z≤1, X+Y+Z=1), such as gallium nitride (GaN) and aluminum gallium nitride (Al X Ga 1-X N: 0≤X≤1). Compounds including other group V elements such as phosphorus (P), arsenic (As) in addition to nitrogen (N) can also be suitably used, for example from the composition formula Al X Ga Y In Z NQM 1-Q (0≤X, Y, Z≤1, X+Y+Z=1, 0

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Abstract

A boron phosphide-based semiconductor device having a junction structure of a Group-III nitride semiconductor layer and a boron phosphide layer with excellent device properties is provided. The boron phosphide-based compound semiconductor device has a heterojunction structure comprising a Group-III nitride semiconductor layer and a boron phosphide layer, wherein the surface of the Group-III nitride semiconductor layer has (0.0.0.1.) crystal plane, and the boron phosphide layer is a {111}-boron phosphide layer having a {111} crystal plane stacked on the (0.0.0.1.) crystal plane of the Group-III nitride semiconductor layer in parallel to the (0.0.0.1.) crystal plane.

Description

[0001] Cross References to Related Applications [0002] This application claims priority under 35 U.S.C. §119(e)(1) to U.S. Provisional Application 60 / 430,644, filed December 4, 2002. technical field [0003] The present invention relates to a boron phosphide-based semiconductor device having a heterojunction structure comprising a group III nitride semiconductor layer and a boron phosphide layer, the layer having good crystallographic orientation characteristics; the invention also relates to a manufacturing method thereof and led. Background technique [0004] Usually, III-nitride semiconductors, such as aluminum gallium indium nitride (Al X Ga Y In Z N: 0≤X, Y, Z≤1, X+Y+Z=1), has been used as the light-emitting layer or cladding of light-emitting diodes (LEDs), or electrons in high-mobility field-effect transistors (TEGFETs) A channel layer or an electron supply layer (see, for example, Patent Document 1 and Non-Patent Document 1). [0005] Devices using group III n...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/205H01L29/20H01L33/00H01L21/205H01L33/30
Inventor 宇田川隆
Owner RESONAC HOLDINGS CORPORATION
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