107 results about "Boron phosphide" patented technology

The present invention solves the problem of conventional group-III nitride semiconductor LED in that, since the LED driving current is supplied only from a pad electrode serving also as an ohmic electrode, the driving current cannot diffuse over a wide range of the light-emitting region and a group-III nitride semiconductor LED having high light emission intensity cannot be successfully provided. A group-III nitride semiconductor LED having high light emission intensity, which is fabricated using a stacked layer structure obtained by providing a surface ohmic electrode, a window layer including an electrically conducting transparent oxide crystal layer and a pad electrode on an electrically conducting substrate through a boron phosphide (BP)-based buffer layer to allow the driving current to diffuse over a wide range of the light-emitting region is provided.

A boron phosphide-based semiconductor light-emitting device, which device includes a light-emitting member having a hetero-junction structure in which an n-type lower cladding layer formed of an n-type compound semiconductor, an n-type light-emitting layer formed of an n-type Group III nitride semiconductor, and a p-type upper cladding layer provided on the light-emitting layer and formed of a p-type boron phosphide-based semiconductor are sequentially provided on a surface of a conductive or high-resistive single-crystal substrate and which device includes a p-type Ohmic electrode provided so as to achieve contact with the p-type upper cladding layer, characterized in that a amorphous layer formed of boron phosphide-based semiconductor is disposed between the p-type upper cladding layer and the n-type light-emitting layer. This boron phosphide-based semiconductor light-emitting device exhibits a low forward voltage or threshold value and has excellent reverse breakdown voltage characteristics.

A compound semiconductor device (1) includes a compound semiconductor having a stacked structure (100) of a hexagonal single crystal layer (101), a boron phosphide-based semiconductor layer (102) formed on a surface of the hexagonal single crystal layer and a compound semiconductor layer (103) disposed on the boron phosphide-based semiconductor layer, and electrodes (108, 109) disposed on the stacked structure, wherein the boron phosphide-based semiconductor layer is formed of a hexagonal crystal disposed on a surface formed of a (1.1.-2.0.) crystal face of the hexagonal single crystal layer.

A boron phosphide-based semiconductor device enhanced in properties includes a substrate (11) composed of a {111}-Si single crystal having a surface {111} crystal plane and a boron phosphide-based semiconductor layer formed on the surface of the substrate and composed of a polycrystal layer (12) that is an aggregate of a plurality of a triangular pyramidal single crystal entities (13) of the boron phosphide-based semiconductor crystal, where in each single crystal entity has a twining interface that forms an angle of 60° relative to a <110> crystal direction of the substrate.

A high emission intensity group-III nitride semiconductor light-emitting device obtained by eliminating crystal lattice mismatch with substrate crystal and using a gallium nitride phosphide-based light emitting structure having excellent crystallinity. A gallium nitride phosphide-based multilayer light-emitting structure is formed on a substrate via a boron phosphide (BP)-based buffer layer. The boron phosphide-based buffer layer is preferably grown at a low temperature and rendered amorphous so as to eliminate the lattice mismatch with the substrate crystal. After the amorphous buffer layer is formed, it is gradually converted into a crystalline layer to fabricate a light-emitting device while keeping the lattice match with the gallium nitride phosphide-based light-emitting part.

A boron phosphide-based semiconductor light-emitting device, comprising: a crystalline substrate; a first semiconductor layer formed on said crystalline substrate, said first semiconductor layer including a light-emitting layer, serving as a base layer and having a first region and a second region different from the first region; a boron phosphide-based semiconductor amorphous layer formed on said first region of said first semiconductor layer, said boron phosphide-based semiconductor amorphous layer including a high-resistance boron phosphide-based semiconductor amorphous layer or a first boron phosphide-based semiconductor amorphous layer having a conduction type opposite to that of said first semiconductor layer; a pad electrode formed on said high-resistance or opposite conductivity-type boron phosphide-based semiconductor amorphous layer for establishing wire bonding; and a conductive boron phosphide-based crystalline layer formed on said second region of said first semiconductor layer, said conductive boron phosphide-based crystalline layer extending optionally to a portion of said boron phosphide-based semiconductor amorphous layer, wherein said pad electrode is in contact with said boron phosphide-based semiconductor crystalline layer at a portion of said pad electrode above the bottom of said pad electrode.

An Ohmic electrode structure comprising a p-conductivity-type boron phosphide-based semiconductor layer containing boron and phosphorus as constitutional elements and having a surface; and an electrode disposed on said surface of said semiconductor layer and having an Ohmic contact with said semiconductor layer, wherein at least a surface portion of said electrode which is in contact with said semiconductor layer is formed from a lanthanide element or a lanthanide element-containing alloy. A compound semiconductor light-emitting device comprising a light-emitting layer formed of a compound semiconductor may advantageously comprise the Ohmic electrode structure

A Group-III nitride semiconductor device including a crystal substrate, an electrically conducting Group-III nitride semiconductor (Al_XGa_YIn_1−(X+Y)N: 0≦X<1, 0<Y≦1 and 0<X+Y≦1) crystal layer vapor-phase grown on the crystal substrate, an ohmic electrode and an electrically conducting boron phosphide crystal layer provided between the ohmic electrode and the Group-III nitride semiconductor crystal layer, the ohmic electrode being disposed in contact with the boron phosphide crystal layer. Also disclosed is a method for producing the Group-III nitride semiconductor device, and a light-emitting diode including the Group-III nitride semiconductor device.

A semiconductor device including at least one gate terminal in operational contact with an active layer or top surface of the semiconductor substrate includes a deposited layer of boron phosphide covering the gate terminal and at least a portion of the active layer or the top surface next to and extending from the gate terminal. According to an aspect, the layer of boron phosphide is deposited by a chemical vapor deposition (CVD) process. The boron phosphide layer will have a thickness less than or equal to about 10 microns. The boron phosphide provides a heat spreading coating across the die surface, thus increasing the surface area that conducts the heat from the die. Since the boron phosphide coating is in intimate contact with the gate terminal(s) and the immediately adjacent passivation surfaces of the device, generated heat can rapidly spread away from the active junction or channel. The additional thermal path(s) provided by the boron phosphide coating may terminate away from the active region to further conduct away the heat through thermally unused areas of the device.

The invention discloses a high-temperature resistant automobile air-conditioning wiring harness and a preparation method thereof. The high-temperature resistant automobile air-conditioning wiring harness consists of two parts, namely a wiring harness shell and a thermal-insulating membrane, wherein the wiring harness shell consists of natural rubber, a PEEK (Polyetheretherketone) material and polyvinyl chloride; the thermal-insulating membrane consists of silicon carbide powder, a high-temperature resistant fiber, boron phosphide, polyethylene and a high-temperature adhesive. As the wiring harness shell is made of three raw materials, namely the natural rubber, the PEEK material and the polyvinyl chloride, as master batch, the strength of the wiring harness shell can be improved, and the preparation efficiency can be improved; the constitution components, namely the silicon carbide powder, he high-temperature resistant fiber, the boron phosphide, the polyethylene and the like, of the thermal-insulating membrane, are very good in thermal resistance, so that the thermal resistance of the prepared thermal-insulating membrane is improved; finally by using the high-temperature adhesive,the wiring harness shell and the thermal-insulating membrane can be well adhered, and due to a water cooling mode, the toughness of the thermal-insulating membrane can be ensured.

This pn-junction compound semiconductor light-emitting device includes a crystal substrate; an n-type light-emitting layer formed of a hexagonal n-type Group III nitride semiconductor and provided on the crystal substrate; a p-type Group III nitride semiconductor layer formed of a hexagonal p-type Group III nitride semiconductor and provided on the n-type light-emitting layer; a p-type boron-phosphide-based semiconductor layer having a sphalerite crystal type and provided on the p-type Group III nitride semiconductor layer; and a thin-film layer composed of an undoped hexagonal Group III nitride semiconductor formed on the p-type Group III nitride semiconductor layer, wherein the p-type boron-phosphide-based semiconductor layer is joined to the thin-film layer composed of an undoped hexagonal Group III nitride semiconductor.

A boron phosphide-based compound semiconductor device with excellent device properties, comprising a boron phosphide-based compound semiconductor layer having a wide bandgap is provided. The boron phosphide-based compound semiconductor layer consists of an amorphous layer and a polycrystal layer provided to join with the amorphous layer, and the room-temperature bandgap of the boron phosphide-based compound semiconductor layer is from 3.0 eV to less than 4.2 eV.

A vapor-phase growth method for forming a boron-phosphide-based semiconductor layer on a single-crystal silicon (Si) substrate in a vapor-phase growth reactor. The method includes preliminary feeding of a boron (B)-containing gas, a phosphorus (P)-containing gas, and a carrier gas for carrying these gases into a vapor-phase growth reactor to thereby form a film containing boron and phosphorus on the inner wall of the vapor-phase growth reactor; and subsequently vapor-growing a boron-phosphide-based semiconductor layer on a single-crystal silicon substrate. Also disclosed is a boron-phosphide-based semiconductor layer prepared by the vapor-phase growth method.

The invention discloses a phototransistor making method and structure, firstly forming a boron phosphide buffer layer on the silicon substrate, then forming the first aluminium nitride to compensate stress, then forming the gallium nitride layer and n-type aluminium nitride layer as the heterogenous junction, then making selective extension or anisotropic etching on the gallium nitride material to form prism shaped light accepting layer with cubic crystal lattice, wherein the light accepting layer gathers the incident light beam to excite the electrons in the n-type aluminium nitride layer and forming high-speed two dimensional electron current in the gallium nitride layer, heightening the power and sensitivity of the phototransistor.

A boron phosphide-based semiconductor light-emitting device includes a substrate of silicon single crystal, a first cubic boron phosphide-based semiconductor layer that is provided on a surface of the substrate and contains twins, a light-emitting layer that is composed of a hexagonal Group III nitride semiconductor and provided on the first cubic boron phosphide-based semiconductor layer and a second cubic boron phosphide-based semiconductor layer that is provided on the light-emitting layer, contains twins and has a conduction type different from that of the first cubic boron phosphide-based semiconductor layer.

The invention discloses a nonmetal catalyst used for selective oxidation of methane, an optimization method and an application thereof and belongs to the technical field of industrial catalysis. The catalyst is a solid nonmetal boron-containing catalyst and comprises hexagonal boron nitride, cubic boron nitride, rhombohedral boron nitride, boron phosphide and boron phosphate. Activation treatmentis carried out for optimizing the number of hydroxyl functional groups on the surface of the catalyst. The catalyst is used for the selective oxidation of methane, wherein products may include H2, CO,ethylene, ethane and a less amount of CO2. Compared with a metal catalyst in the prior art, the nonmetal catalyst is abundant in raw material reserves, is environment-friendly, has good high-temperature stability and simple preparation method, and has huge industrial development and application prospect.

The invention discloses a preparation method of an organic silicon pouring sealant with high thermal conductivity. The preparation method comprises steps as follows: boron phosphide and concentrated nitric acid are mixed and stirred for 5 h and are filtered, solids are washed with deionized water and dried, and pretreated boron phosphide is obtained; prepared boron phosphide, h-BN and isopropyl alcohol are mixed and stirred uniformly and are subjected to ultrasonic treatment for 1 h under 1000W powder, hydroxyl silicone oil is added, ultrasonic treatment is continued for 2-5 h, a product is filtered and dried after ultrasonic treatment, and modified composite filler is prepared; the organic silicon pouring sealant is prepared from vinyl silicone oil, hydrogen-containing silicone oil, the modified composite filler, a dispersing agent, a cross-linking agent, a catalyst, an inhibitor and an antifoaming agent through mixing, stirring and defoaming. The organic silicon pouring sealant prepared with the method is excellent in mechanical property and good in thermal conductivity.

A boron phosphide-based semiconductor device includes a single crystal substrate having formed thereon a boron-phosphide (BP)-based semiconductor layer containing boron and phosphorus as constituent elements, where phosphorus (P) occupying the vacant lattice point (vacancy) of boron (B) and boron occupying the vacant lattice point (vacancy) of phosphorus are present in the boron-phosphide (BP)-based semiconductor layer. The boron phosphide-based semiconductor device includes a p-type boron phosphide-based semiconductor layer in which boron occupying the vacancy of phosphorus is contained in a higher atomic concentration than phosphorus occupying the vacancy of boron and a p-type impurity of Group II element or Group IV element is added.

A compound semiconductor light-emitting diode comprising a light-emitting layer composed of a Group III-V compound semiconductor, and a current diffusion layer provided on the light-emitting layer and composed of a Group III-V compound semiconductor, characterized in that the current diffusion layer is composed of a conductive boron-phosphide-based semiconductor and has a bandgap at room temperature wider than that of the light-emitting layer.

A simplified method for synthesizing boron phosphide at high yields. The method requires mixing of boron phosphate and magnesium metal without diluents into a homogenous mixture, loosely packing the mixture at less than 20,000 psi and igniting the mixture using an energy input that is not greater than 20% of the reaction energy output to create a self-propagating high-temperature reaction wherein the boron phosphate and magnesium metal is completely burned during the reaction to synthesize boron phosphide at high yields.