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47results about How to "Small dielectric coefficient" patented technology

VDMOS transistor and preparation method thereof

The invention discloses a VDMOS transistor and a preparation method thereof and belongs to the field of semiconductors. The VDMOS transistor comprises a first conduction type substrate, a first conduction type epitaxial layer, a second conduction type injection region, a first conduction type highly doped source region and a grid structure, the second conduction type injection region and the first conduction type highly doped source region are arranged in the epitaxial layer, and the grid structure comprises a grid insulating layer, a semi-insulating polycrystalline silicon layer, a silicon oxynitride layer and a polycrystalline silicon layer. The grid insulating layer is arranged above a drift region of the epitaxial layer, the semi-insulating polycrystalline silicon layer is arranged above the grid insulating layer, the silicon oxynitride layer is arranged above a channel region, and the polycrystalline silicon layer is covered on the semi-insulating polycrystalline silicon layer and the silicon oxynitride layer. A heat nitriding silicon oxynitride layer is introduced into the preparation method, a traditional silica layer which is used as a gate medium layer on a channel is replaced, and the semi-insulating polycrystalline silicon layer is added on an oxide layer which is arranged above the drift region of the epitaxial layer. The VDMOS transistor and the preparation method thereof can obviously reduce grid-drain capacitance and achieve overcoming the defects that insulating performance of the grid insulating layer is poor, current leaking of a grid electrode is increased, and degeneration of the VDMOS performance is unreliable.
Owner:SOUTH CHINA UNIV OF TECH

Radio frequency electronic component testing device and testing equipment applying same

The invention provides a radio frequency electronic component testing device which comprises an electrical tester, an antenna tester and a testing chamber, wherein the testing chamber is provided with a cover body with a first anti-interference component, the first anti-interference component is made of shielding-proof materials and has a low dielectric coefficient so that wireless signals can pass through, the cover body closes a first bearing tool to form a testing space, and the testing space is used for accommodating an electrical tester with a radio frequency electronic component; the testing chamber is located between the electrical tester and the antenna tester, so that the radio frequency electronic component can execute electrical testing operation in the electrical tester in the testing chamber, and can also execute wireless signal testing operation with the external antenna tester through the first anti-interference component in the testing chamber, thereby improving the testing quality. The invention further provides testing equipment applying the radio frequency electronic component testing device. The testing equipment comprises a machine table, a feeding device, a material receiving device, a radio frequency electronic component testing device, a conveying device, and a central control device.
Owner:HON PRECISION INC

A kind of vdmos transistor and its preparation method

The invention discloses a VDMOS transistor and a preparation method thereof and belongs to the field of semiconductors. The VDMOS transistor comprises a first conduction type substrate, a first conduction type epitaxial layer, a second conduction type injection region, a first conduction type highly doped source region and a grid structure, the second conduction type injection region and the first conduction type highly doped source region are arranged in the epitaxial layer, and the grid structure comprises a grid insulating layer, a semi-insulating polycrystalline silicon layer, a silicon oxynitride layer and a polycrystalline silicon layer. The grid insulating layer is arranged above a drift region of the epitaxial layer, the semi-insulating polycrystalline silicon layer is arranged above the grid insulating layer, the silicon oxynitride layer is arranged above a channel region, and the polycrystalline silicon layer is covered on the semi-insulating polycrystalline silicon layer and the silicon oxynitride layer. A heat nitriding silicon oxynitride layer is introduced into the preparation method, a traditional silica layer which is used as a gate medium layer on a channel is replaced, and the semi-insulating polycrystalline silicon layer is added on an oxide layer which is arranged above the drift region of the epitaxial layer. The VDMOS transistor and the preparation method thereof can obviously reduce grid-drain capacitance and achieve overcoming the defects that insulating performance of the grid insulating layer is poor, current leaking of a grid electrode is increased, and degeneration of the VDMOS performance is unreliable.
Owner:SOUTH CHINA UNIV OF TECH
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