Preparation method of binary gradiently doped barium strontium titanate (BST) film

A gradient doping and binary doping technology, applied in the field of functional materials, can solve the problems of difficulty in improving the comprehensive dielectric properties of BST films, and achieve the effects of meeting the needs of microwave applications, widening the Curie temperature range, and improving the dielectric properties.
CN102173783BInactive Publication Date: 2012-11-07UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
UNIV OF ELECTRONICS SCI & TECH OF CHINA
Publication Date
2012-11-07
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a preparation method of a binary gradiently doped barium strontium titanate (BST) film, aiming at the technical problem that the comprehensive dielectric property of the BST film is difficult to increase owning to the ferroelectric phase or paraelectric phase single-phase structure caused by the narrow Curie temperature (Tc) range of the conventional BST film, and belongingto the technical field of functional materials. By controlling the molar ratio of Ba and Sr to Ti, the doping element, the concentration, the gradient, the direction and the film design and the preheating treatment and the film thickness (or layer number), the binary gradiently doped BST film with a wider Tc range, a ferroelectric phase and paraelectric phase composite structure and excellent comprehensive performance can be prepared, wherein the dielectric constant is less than 240, the tuning rate is more than 25%, the dielectric loss is less than 0.63% and the permittivity-temperature coefficient is less than 0.0024 / K. The method is convenient, fast, cheap and efficient; and the prepared binary gradiently doped BST film can be used in microwave tuning elements.
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Description

technical field

[0001] The invention belongs to the technical field of functional materials, and relates to a preparation method of a binary gradient doped BST thin film, which broadens the range of the Curie temperature and greatly improves the comprehensive dielectric properties of the BST thin film. Background technique

[0002] The non-linear variation of dielectric constant of BST film with external electric field has broad application prospects in the microwave field, and it has become the preferred material to replace ferrite and semiconductor. In order to realize the application of BST film in the microwave field, it is required that the film has excellent comprehensive dielectric tuning performance, that is, it has a dielectric tuning rate of more than 20%, a dielectric loss of less than 1%, a dielectric constant of less than 300 and a dielectric constant of less than 0.005 / K dielectric temperature coefficient. However, the curie temperature range of conventional B...

Claims

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