Method for producing material of base plate for encapsulating integrated circuit

A technology for packaging substrates and integrated circuits, applied in circuits, metal material coating processes, electrical components, etc., can solve problems such as low dielectric coefficient and high thermal conductivity, achieve simple manufacturing process, high thermal conductivity, and improve heat dissipation. Effect

Inactive Publication Date: 2003-05-07
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

After many literature searches, no packaging substrate material with high thermal conductivity, low dielectric coefficient, and non-toxic to the human body has been found so far.

Method used

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  • Method for producing material of base plate for encapsulating integrated circuit
  • Method for producing material of base plate for encapsulating integrated circuit

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Embodiment Construction

[0012] The technical solution of the present invention will be further described in conjunction with the accompanying drawings and embodiments.

[0013] Referring to Fig. 1, an alumina ceramic sheet substrate 6 is placed on the sample stage 7 in the deposition reaction chamber 1, and 16 tungsten wires 5 with a diameter of 0.4 mm are arranged above it as a heating source, and its output power is continuous Adjustable, the maximum power is 1000W, using ethanol and hydrogen as reactants. The analytically pure hydrogen in the hydrogen cylinder 2 has two output branches. One gas delivery branch is for hydrogen to pass directly into the deposition reaction chamber 1 through the mass flow meter 11, and its flow rate is controlled to be 100ml / min; the other gas delivery branch The hydrogen gas passes through the bubbling bottle 3 and draws the analytically pure ethanol in the bottle into the deposition reaction chamber 1 through a mass flow meter. A bubble bottle 3 containing analyti...

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Abstract

A substrate material for IC package features that the diamond film is deposited on the alumina ceramics by hot-wire chemical gas-phase deposition method, that is, the diamond film is deposited on the alumina ceramics in the reaction chamber under vacuum condition. In this process, W wire is used as heat source and ethyl alcohol and hydrogen gas are used as reactants.

Description

technical field [0001] The invention relates to a novel substrate material suitable for integrated circuit packaging, which belongs to the field of electronic materials and components. Background technique [0002] As we all know, alumina ceramic is a kind of packaging substrate material traditionally used in integrated circuits, but due to the small thermal conductivity of alumina ceramics (~0.2W / cm K), it cannot dissipate the heat of the chip in time, which is not conducive to integrated circuits. Development in the direction of high power density; in addition, the dielectric coefficient of alumina ceramics is also large (~10), which will lead to longer signal delay time, thus limiting the development of integrated circuits to higher frequencies. Based on the above reasons, people have always hoped to find a new packaging substrate material, which has both high thermal conductivity and low dielectric constant, and can match with the existing packaging process to reduce pro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/85C23C16/27H01L23/15
Inventor 方志军夏义本王林军
Owner SHANGHAI UNIV
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