Rare earth doped ceramic-based diamond substrate material and preparation method thereof

Abstract

The invention discloses a rare earth doped ceramic-based diamond substrate material. The rare earth doped ceramic-based diamond substrate material comprises the following raw materials in percentages by mass: 65 to 85% of diamond powder and 15 to 35% of ceramic powder, wherein the ceramic powder comprises the following raw materials in percentages by mass: 40 to 62% of SiO2, 21 to 33% of B2O3, 5 to 13% of Li2O, 3 to 7% of Al2O3, 2 to 6% of Na2O, 2 to 5% of CaO and 1 to 10% of CeO2. The material is prepared through the following steps: preparing the ceramic powder, then carrying out batching and molding, and carrying out sintering at 750 to 800 DEG C. The rare earth doped ceramic-based diamond substrate material provided by the invention is prepared at low temperature and normal pressure, has highest thermal conductivity and flexure strength respectively reaching to 4.5 w / (m-k) and 103 Mpa, has the advantages of low dielectric coefficient and thermal expansion coefficient matching with a Si electronic component, and is a substrate material applicable to electronic packaging.

Description

technical field [0001] The invention belongs to a ceramic composition characterized by components, in particular to a rare earth-doped ceramic-based diamond substrate material and a preparation method thereof. Background technique [0002] The heat dissipation problem of electronic devices is one of the technical bottlenecks faced by the development of electronic information industry. Electronic packaging materials have gone through two generations of development. At present, countries are actively carrying out research on the third generation of electronic packaging materials with high thermal conductivity diamond, highly oriented pyrolytic graphite (HOPG), and high thermal conductivity carbon fiber as reinforcement phases. Among them, HOPG and High thermal conductivity carbon fibers are anisotropic and expensive to produce. The thermal conductivity of diamond is the highest among the previously discovered substances, and there is no anisotropy, so it is one of the thermal...

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Problems solved by technology

[0003] The purpose of the present invention is to overcome the shortcomings of high temperature and high pressure conditions and high cost for preparing diamond substrate materials, and provide a rare earth doped ceramic based diamond substrate material and its preparation method. Made, the thermal conductivity and bending strength can reach 4.5w / (m k) and 103Mpa respectively, and has the advantages of low dielectric coefficient, thermal expansion coefficient matching Si electronic components, etc.

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