Surface modification process for low-dielectric material

Abstract

The invention discloses a surface modification process for a low-dielectric material. According to the surface modification process, a silicon dioxide wet gel thin film obtained by using a spin coating method is soaked in a modification solution for surface modification, and then is subjected to thermal treatment in an atmospheric environment, so that the silicon dioxide thin film material with a low dielectric constant is prepared. A method for reducing the dielectric coefficient of the material through using two simple and convenient techniques of soaking with a solvent and performing the thermal treatment is used in the process, so that the porosity of the material still maintains at a relatively low level, and the mechanical strength can keep a relatively high level.

Description

technical field [0001] The invention belongs to the technical field of preparation and processing of low dielectric materials, in particular to a surface modification process of low dielectric materials. Background technique [0002] The increase in the integration of integrated circuits, the miniaturization of device sizes, and the increase in the density of electronic components increase the inter-line capacitance, interlayer capacitance, and metal connection resistance, resulting in increasingly prominent problems such as signal delay, noise, and power loss. In order to solve these problems, it is an inevitable trend in the development of integrated circuits to use low dielectric materials as dielectric insulating layers. At present, the low dielectric materials that have been studied more are silsesquioxane SSQ (silsesquioxane) base, SiO 2 base (F-containing silicon oxide (SiOF), C-containing silicon oxide (SiOCH)), porous SiO 2 (aerosols and xerogels), fluorinated amo...

AI Technical Summary

Problems solved by technology

Common modification methods include doping modification, such as fluorine-containing silicon oxide, C-containing silicon oxide, etc. The electromechanical properties of materials prepared by this process change with the proportion of dopants, and during the doping process It is difficult to ensure the uniformity of impurities, so the dielectric constant of the material is prone to deviation, which affects the electrical properties of the material

[0004] Therefore, it is necessary to propose a new method of material modification to overcome the shortcomings caused by the doping modification process.

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