Mobile microstructure cosupported by silicon and silicon dioxide, and its production method

A silicon dioxide and manufacturing method technology, applied in the field of micro-electromechanical systems, can solve the problems of excessive rigidity, difficulty in driving, and difficulty in obtaining silicon membranes, etc., and achieve the effect of low cost and improved support strength

Inactive Publication Date: 2008-10-01
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] For the production of tiny structures with a thickness of 10 to 50 microns in the movable part, one method is to use dry etching or wet etching to produce a layer of silicon film with a thickness of more than ten to tens of microns as a support For example, in J.H.Jerman's "A Miniature Fabry-Perot Interferometer Fabricated Using Silicon Micromachining Techniques", the supporting part of the movable structure is a layer of silicon film with a thickness of 12 microns. First, such a structure is too rigid and difficult to drive. Secondly, the It is difficult to obtain such a thin and uniform silicon film with the current process; another method is to make a set of support beams to support the movable parts. metal, it will cause them to be polluted by impurities in subsequent processes such as etching and scribing, or the structure will be damaged due to too low strength; in addition, a group of ordinary silicon wafers with such a thickness is also difficult to manufacture. Free-standing silicon diaphragms using silicon-on-insulator wafers" article uses SOI silicon wafers to make such a structure, which undoubtedly greatly increases the production cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Mobile microstructure cosupported by silicon and silicon dioxide, and its production method
  • Mobile microstructure cosupported by silicon and silicon dioxide, and its production method
  • Mobile microstructure cosupported by silicon and silicon dioxide, and its production method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] This is a resonant cavity with adjustable cavity length made by using the Fabry-Perot multi-velocity of light interference effect. By adjusting the size of the cavity length, the beam of a specific wavelength can be transmitted, and other beams can be reflected back, so as to achieve filtering. Effect.

[0029] Please refer to the process of making the upper plate movable resonant cavity according to the present invention Figure 4 ,Specifically:

[0030] 1. Oxidize the silicon wafer with an oxidation thickness of 3500 angstroms, such as Pic 4-1 shown;

[0031] 2. The photolithographic resonant cavity is etched with KOH solution to a depth of about 10 microns, and then the oxide layer is removed, such as Figure 4-2 shown;

[0032] 3. Perform photolithography on the bottom of the cavity to etch the shape of the beam and the plate with a height of 20 microns, such as Figure 4-3 shown;

[0033] 4. The silicon wafer is oxidized, the thickness of the oxide layer is ...

Embodiment 2

[0039] The resonant cavity in step 2 is etched by dry method, and other steps are as in embodiment 1.

Embodiment 3

[0041] In step 7 of Example 1, put the bonding sheet into KOH solution, perform chemical mechanical polishing when it is thinned to 150 microns, and then use ICP to thin it until the oxide layer is exposed, and the rest of the steps are as in Example 1. The flatness of the silicon wafer obtained by this combined thinning method can be higher than that obtained by a single thinning method.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a movable microstructure supporting commonly by silicon and silicon oxide, and relates to the method for preparation. Use silicon beam and silicon oxide film as the common supporting part to support commonly the centre movable part. It increases the supporting intensity and improves the dislocation in electrostatic drive; the beam supported movable structure is polluted by impurity and destroyed by etching solution in the sequent process, while using the silicon oxide film to protect, the movable structure is not polluted and destroyed in the subsequent process, increasing the selectivity of improving the device preparing process. The preparation process is as following: preparing silicon chip with graph, bonding onto the substrate, and then attenuating the silicon chip from back.

Description

technical field [0001] The invention relates to a design and manufacturing method of a movable structure in the field of micro-electromechanical systems (MEMS: Micro-Electro-Mechanical-Systems), in particular to the design of a movable microstructure with silicon and silicon dioxide as a common support and production methods. Background technique [0002] Micro-Electro-Mechanical Systems (MEMS) is a technology that has developed rapidly in recent years. Based on mature semiconductor integrated circuit micro-processing technology and ultra-precision machining technology, it integrates technologies in multiple fields into one chip, and integrates information acquisition and processing. The integration of the execution integration together forms a complete multi-functional system with the characteristics of high performance, low cost and miniaturization. [0003] The movable tiny structure is usually an important part of information collection. It can convert pressure, acceler...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityPatents(China)
IPC IPC(8): B81B5/00B81C1/00G02B26/00G02B26/06
Inventor龙文华杨建义李广波贾科淼王跃林
OwnerSHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI