Semiconductor devices and method for forming bottom connector used in the Semiconductor devices

Abstract

A connector (146) formed from the bottom surface of the integrated circuit device, comprising a first conductive layer (114) formed on the first surface of the integrated circuit device and a second surface (141) formed on the integrated circuit device on the second conductive layer. The two conductive layers are connected by an opening (144) penetrating through a semiconductor substrate (110) separating the two conductive layers. The method for making the bottom surface connector (146) includes forming the first conductive layer (114), and then forming a layer through the semiconductor substrate (110) to expose at least a part of the bottom surface of the first conductive layer (114) ( 116), and then fill the opening hole (144) with conductive material (150) to provide a conductive connection to the first conductive layer (114) on the bottom surface of the integrated circuit device.

Description

technical field [0001] The invention relates to a semiconductor manufacturing technology, in particular to a bottom connector for an integrated circuit device and a method for manufacturing the bottom connector. Background technique [0002] A continuing trend in the semiconductor industry is to increase the operating speed of integrated circuit devices such as microprocessors and memory devices. This trend is exacerbated by consumer demand for computers and electronic devices that operate at faster speeds. The rate of increase Demand for semiconductor devices such as transistors continues to be miniaturized. That is, many of the components of a typical field-effect transistor (FET) (such as channel length, junction depth, gate dielectric thickness, etc.) have shrunk, e.g., all other things being equal, the shorter the channel length of a FET , the transistor runs faster. Thus, there is a continuing trend to miniaturize the components of general transistors to increase the...

AI Technical Summary

Problems solved by technology

For example, due to the small gap between adjacent components and interconnection lines in the integrated circuit, the cross section of the conductive channel 32 must be reduced; and when the integrated circuit is increasingly complex and uses more layers, the electrical path of the conductive channel 32 will be reduced. The longer; under the reduction of the cross-section of the conductive channel 32 and the increase of its electrical channel, the resistance to the current is greater, which will cause more heat to be generated

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