Semiconductor element
A semiconductor and component technology, applied in the field of insulated gate semiconductor components, can solve problems such as inability to obtain heat dissipation, and achieve the effect of preventing thermal runaway and suppressing heat generation
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
no. 1 approach
[0056] Figure 1 ~ Figure 4 The semiconductor element 10 according to the first embodiment of the present invention is shown. figure 1 It is a plan view showing the semiconductor element 10 . figure 2 yes means figure 1 A plan view of a region 10 a surrounded by a dot-dash line in the illustrated semiconductor component 10 is shown. image 3 yes means figure 1 A plan view of a region 10b surrounded by a dot-dash line in the illustrated semiconductor component 10 is shown. Figure 4 yes figure 2XX cross-sectional view of the semiconductor element 10 shown. For the sake of illustration N + type launch area 14 configuration, the figure 1 In , the emitter electrode 31, the gate electrode 33, and the interlayer insulating film 35 described later are omitted, and the same as figure 2 and image 3 different, the illustrated N + The shape of the type emission area 14 is a rectangle. exist figure 2 and image 3 In , the emitter electrode 31 described later is omitted. ...
no. 2 approach
[0088] Hereinafter, a semiconductor element according to a second embodiment of the present invention will be described with reference to the drawings. The semiconductor element of this embodiment differs from the semiconductor element of the first embodiment in that although the area of the emitter region is approximately the same at the peripheral portion and the central portion, the thickness of the gate insulating film is different between the peripheral portion and the central portion of the element. of. The same reference numerals are assigned to the same parts as those of the semiconductor element of the first embodiment, and detailed description thereof will be omitted.
[0089] Figure 7 ~ Figure 1 0 represents the semiconductor element 60 according to this embodiment. Figure 7 It is a plan view showing a structural example of the semiconductor element 60 . Figure 8 yes Figure 7 X1-X1 line sectional view of the shown semiconductor element 60, Figure 9 It is...
no. 3 approach
[0103] Hereinafter, a semiconductor element 80 according to a third embodiment of the present invention will be described with reference to the drawings. The semiconductor element 80 of this embodiment differs from the semiconductor elements of the first and second embodiments in that although the area of the emitter region and the thickness of the gate insulating film are the same at the center and peripheral portions of the semiconductor element, the gate The impurity concentration under the insulating film is different between the central portion and the peripheral portion of the semiconductor element. The same reference numerals are assigned to the same parts as those of the semiconductor elements of the first embodiment and the second embodiment, and detailed description thereof will be omitted.
[0104] Figures 11 to 13 A semiconductor element 80 according to this embodiment is shown. Figure 11 It is a plan view showing a configuration example of the semiconductor ...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More