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Side wall passivation method of reaction ion deep etching processing micro structure

A technology of reactive ions and microstructures, applied in nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problem that the sidewall of the etched pattern is not steep, and achieve the effect of low cost

Inactive Publication Date: 2009-04-22
SHANGHAI JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the sidewall is not passivated, the sidewall is corroded, and the sidewall of the etched pattern is not steep

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] (1) Sputter a seed layer of 15nmCr and 85nmCu on the surface of the cleaned plexiglass sample, and then paste the plexiglass sheet on the glass substrate. After the glue is cured, use a microtome to mill the plexiglass. cutting, thinning the plexiglass to a set thickness, and then sputtering a seed layer of 15nmCr and 85nmCu on the upper surface of the plexiglass.

[0023] (2) Spin the glue on the surface of the plexiglass at a speed of 4000r / min, spin the glue for 30 seconds, and the thickness of the glue is 2 μm, then expose to ultraviolet rays for 20 seconds, and develop for 40 seconds to harden the film.

[0024] (3) Then carry out nickel mask electroplating (PH value 4.5, electric current 20mA / cm 2 , the plating time is about 10 minutes), the mask thickness is 2 μm, and the glue is removed with 3% KOH solution, and the Cr / Cu is selectively etched to form a patterned Ni mask.

[0025] (4) Optimizing the etching process: specifically select O 2 and CHF 3 The mixed g...

Embodiment 2

[0029] (1) Sputter a seed layer of 15nmCr and 85nmCu on the surface of the cleaned plexiglass sample, and then paste the plexiglass sheet on the glass substrate. After the glue is cured, use a microtome to mill the plexiglass. cutting, thinning the plexiglass to a set thickness, and then sputtering a seed layer of 15nmCr and 85nmCu on the upper surface of the plexiglass.

[0030] (2) Spin the glue on the surface of the plexiglass at a speed of 4000r / min, spin the glue for 30 seconds, and the thickness of the glue is 2.5μm, then expose to ultraviolet rays for 22 seconds, and develop for 45 seconds to harden the film.

[0031] (3) Then carry out nickel mask electroplating (PH value 4.5, electric current 20mA / cm 2 , the plating time is about 10 minutes), the mask thickness is 2.3 μm, and the glue is removed with 3% KOH solution, and the Cr / Cu is selectively etched to form a patterned Ni mask.

[0032] (4) Optimizing the etching process: specifically select O 2 and CHF 3 The mi...

Embodiment 3

[0036] (1) Sputter a seed layer of 15nmCr and 85nmCu on the surface of the cleaned plexiglass sample, and then paste the plexiglass sheet on the glass substrate. After the glue is cured, use a microtome to mill the plexiglass. Cutting, thinning the plexiglass to a set thickness, and then sputtering a seed layer of 15nmCr and 85nmCu on the upper surface of the plexiglass;

[0037] (2) Spin the glue on the surface of the plexiglass at a speed of 4000r / min, spin the glue for 30 seconds, and the thickness of the glue is 2-3μm, then expose to ultraviolet light for 30 seconds, and develop for 50 seconds to harden the film.

[0038] (3) Then carry out nickel mask electroplating (PH value 4.5, electric current 20mA / cm 2 , the plating time is about 10 minutes), the mask thickness is 3 μm, the glue is removed with 3% KOH solution, and the Cr / Cu is selectively etched to form a patterned Ni mask.

[0039] (4) Optimizing the etching process: specifically select O 2 and CHF 3 The mixed g...

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Abstract

A side wall passivating method for the reactive ion deep etching to microstructure features that the organic glass is used as the material to be etched, the electroplating with Ni mask is used for generating pattern, the N2 is used as main etching gas, the CHF3 is proportionally added to O2 for passivating the surface of side walls, and the components, pressure and power of etching gas are regulated to control the etching speed of side walls for deeply and vertically etching.

Description

technical field [0001] The invention relates to a method in the technical field of microfabrication, in particular to a sidewall passivation method for reactive ion deep etching processing microstructures. Background technique [0002] At present, the micromachining methods used to fabricate high aspect ratio microstructures mainly include LIGA technology, deep ultraviolet lithography, ion beam etching, laser etching, etc. Among them, LIGA technology is the most advanced one, but because this technology needs to use Synchrotron radiation light sources and special masks are limited by long processing cycles and high costs; deep ultraviolet lithography is also a commonly used micromachining technology, and its processed structures have low roughness, but due to The diffraction effect of deep ultraviolet rays makes the aspect ratio of the processed microstructures smaller. Several other processes have their obvious shortcomings. For example, ion beam etching is mainly physical...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B82B3/00
Inventor 杨春生张丛春丁桂甫黄龙旺
Owner SHANGHAI JIAOTONG UNIV
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