Film stress test method and test structure
A technology of thin film stress and test structure, applied in measurement devices, surface/boundary effects, instruments, etc., can solve problems such as complex equipment, restrict application, increase test complexity, etc., to eliminate systematic errors, improve detection accuracy and sensitivity, Simple and practical effect of structural processing technology and detection method
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[0036] The test structure is shown as figure 1 , Structures 1, 2, and 3 are support beam structures, respectively, and test structures 4 and 5 are circular and square suspended structures. The size of the suspended structure is 1mm×1mm. Since the test structure has a fixed support, the constraint conditions are the same during the test of the curvature radius before and after the deposition of the film, so that the influence of gravity can be eliminated. Secondly, in the range of 1×1mm, the thickness of the silicon wafer and the non-uniformity of the deposited film are greatly reduced, reducing the error. Since the silicon film is thinned to 15 μm, which is only 1 / 30 of the thickness of the wafer substrate, according to the formula (1), its resolution is greatly improved.
[0037] The substrate bending method obtains the stress of the film by measuring the radius of curvature of the substrate before and after film deposition, which is expressed by formula (1) as follows:
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