A device and method for improving detection precision of oxidated layer thickness
A technology of oxide layer thickness and detection accuracy, which is applied in the field of wafer oxide layer thickness detection, can solve the problems of oxide layer thickness thinning, inaccurate measurement, and influence of wafer thickness control, and achieve the effect of stable thickness and precise process control
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[0011] like figure 1 As shown, the present invention relates to the device that improves the detection accuracy of oxide layer thickness and comprises a furnace tube 1, a crystal boat 2, several wafers 3, three control sheets 4 (41,42,43) and two blocking sheets 5 (51 , 52).
[0012] see figure 1 , the wafer boat 2 is used to carry several wafers 3 , and the wafers 3 are arranged horizontally in the wafer boat 2 . The upper and lower surfaces of the three control sheets 4 and the two blocking sheets 5 are silicon oxide (SiO 2 ), the first control sheet 41 is located at the top of the wafer boat 2 , the second control sheet 42 is located at the middle of the wafer boat 2 , and the third control sheet 43 is located at the bottom of the wafer boat 2 .
[0013] At normal temperature, the machine (not shown) for loading the wafer 3 is set by the computer to reserve three vacancies for the upper, middle and lower wafer boat 2 for the control sheet 4, and the second control sheet ...
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