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Chemical amplification type positive resist composition

A technology of photoresist and composition, applied in optics, optomechanical equipment, instruments, etc., can solve the problems of magnetic film pattern size fluctuation, fluctuation, and inability to form fine magnetic film patterns, etc., and achieve good replicability effect

Active Publication Date: 2009-10-14
TOKYO OHKA KOGYO CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if a chemically amplified photoresist is used in this method, the resolution of the photoresist pattern is insufficient and the width of the depth of focus is insufficient, meaning that the tapered photoresist pattern cannot be stably reproduced.
Therefore, if such a photoresist pattern is used and then ion milling or plating is performed, a large number of problems may occur, including inability to form a fine magnetic film pattern, fluctuations in the size of the magnetic film pattern on the substrate, fluctuations in the magnetic film pattern on the substrate, etc. The inclination angle of the side wall (θ in the description below 2 ' and θ 3 ')fluctuation

Method used

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  • Chemical amplification type positive resist composition
  • Chemical amplification type positive resist composition
  • Chemical amplification type positive resist composition

Examples

Experimental program
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Effect test

Embodiment

[0147] Examples of the present invention are described below, but the scope of the present invention is by no means limited by the examples provided below.

[0148] [Examples 1 to 4 (first form), Comparative Example 1]

[0149]

[0150] Five different positive photoresist compositions of Examples 1 to 4 and Comparative Example 1 were prepared in the following manner by changing the amount of component (A).

[0151] That is, in component (D), component (A), component (B), component (C), component (E) and any other components are uniformly dissolved to obtain a positive photoresist composition .

[0152] As component (A), anthracene methanol was used as shown in [Formula 1] below. In Examples 1 to 4, by using 4.0, 4.5, 5.0 and 5.5 parts by weight of component (A) per 100 parts by weight of component (B), the blending amount of component (A) was changed in a stepwise manner . In Comparative Example 1, component (A) was not added.

[0153] As component (B), 100 parts by wei...

Embodiment 5 to 12

[0178] [Embodiments 5 to 12 (second mode)]

[0179]

[0180] Eight different positive photoresist compositions of Examples 5 to 12 were prepared by changing the amount of component (A) in the following manner.

[0181] That is, in addition to changing the components in a stepwise manner by using 0.2, 0.5, 1.0, 1.5, 2.0, 3.0, 4.0 and 4.5 parts by weight of component (A) per 100 parts by weight of component (B), respectively ( The positive photoresist compositions of Examples 5 to 12 were prepared in the same manner as in Example 1 except for the mixing amount of A). The positive photoresist compositions of Examples 11 and 12 were the same as those of Examples 1 and 2 described above, respectively.

[0182] Then, each positive photoresist composition thus obtained was applied to the surface of a silicon wafer using a spin coater, and then prebaked and dried on a hot plate at 100° C. for 90 seconds, thereby forming a film having a film thickness of 800 nm. photoresist film. ...

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Abstract

A positive-type photoresist composition capable of forming a fine photoresist pattern, properly controlling the angle of a tapered structure of the photoresist pattern, and capable of forming a photoresist pattern with an excellent focal depth width. This positive type photoresist composition is formed of a chemically amplified positive type photoresist composition having a light transmittance of 20 to 75% for light having a wavelength of 248 nm through a photoresist film having a thickness of 0.3 μm.

Description

technical field [0001] The present invention relates to a positive photoresist composition with suppressed light transmittance, and a method for forming a magnetic film pattern using the photoresist composition, wherein the specific magnetic film formed by the chemically amplified positive photoresist composition The transmittance of the photoresist film to radiation with a wavelength of 248nm is specified within a specific range. Background technique [0002] The increase in recording density of magnetic recording media continues to occur at a remarkable rate, and further miniaturization of magnetic heads must be achieved in order to meet future demands for further increases in recording density. [0003] For example, in the readout portion of the magnetic head (head portion for readout), not only must a fine photoresist pattern (isolation pattern) be formed, whereby the fine photoresist pattern can be formed, but also the shape of such a fine magnetic film must be Approxi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/039H01L21/30
Inventor 新堀博
Owner TOKYO OHKA KOGYO CO LTD
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