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Method for modeling diode multiple simulator format SPICE model

A diode model and model modeling technology, applied in instruments, special data processing applications, electrical digital data processing, etc., can solve the problems of destroying the model parameter compatibility of model parameters and the influence of diode modeling efficiency, and achieve good simulation results and The effect of testing data fit

Active Publication Date: 2009-12-30
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

Using the existing SPICE model modeling method of multiple simulator formats of diodes, although the model parameters of the two simulator formats can finally obtain a good fit between the model simulation and test results, but However, it destroys the compatibility between the model parameters of the same diode HSPICE simulator format and the model parameters of the SPECTRE simulator format
At the same time, the modeling efficiency of the diode is also greatly affected by

Method used

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  • Method for modeling diode multiple simulator format SPICE model
  • Method for modeling diode multiple simulator format SPICE model

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Embodiment Construction

[0013] Such as figure 1 As shown, the SPICE model modeling method of multiple diode emulator formats of the present invention includes the following steps: the first step is to extract diode model parameters in HSPICE emulator format for the diode to be modeled. And the diode model parameter extraction in the HSPICE simulator format can be carried out in two steps: first, the saturation current parameter JS of the diode area part, the saturation current parameter JSW of the diode circumference part and the current recombination coefficient of the diode are extracted in the small current injection region of the diode N. Secondly, the model parameter IK of the current distortion that occurs when the diode is injected with a large current and the series resistance RS of the diode are extracted in the diode large current injection region. Then, in the diode reverse current working region, the diode breakdown voltage VB and the diode breakdown current IBV are extracted.

[0014] ...

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Abstract

The invention discloses a modeling method of a diode SPICE model with various emulator formats, which includes the steps that: the extraction of the diode model parameter with HSPICE emulator format is carried out; the important parameter of the HSPICE emulator format is transformed into the diode model parameter with corresponding SPECTRE emulator format, and the extraction of the diode model parameter in the non-high current injecting area of the SPECTRE emulator format is carried out; the model parameter IKP which generates current distortion of the perimeter part of the diode is added as the model parameter, when the high current is injected, and the extraction of the diode model parameter in the high current injecting area of the SPECTRE emulator format is carried out; the numerical value of the IKP is optimized. The invention can obtain the diode SPICE model with better simulation result and fitness of test data in a short time.

Description

technical field [0001] The invention relates to the field of modeling methods of diode models, in particular to a modeling method of SPICE models in multiple diode emulator formats. Background technique [0002] Diode is an important semiconductor device in semiconductor integrated circuits, and it is widely used in the field of integrated circuit technology. In order to predict the performance and reliability of a diode device in its environment, it is necessary to simulate the diode. [0003] SPICE (simulation program with integrated circuit emphasis) is a circuit simulation program developed by the University of California, Berkeley in 1972. Subsequently, the version is continuously updated, and the functions are continuously enhanced and perfected. In 1988, SPICE was designated as the American National Industrial Standard. It can simulate and analyze many components. In the process of extracting the diode SPICE model, it is generally necessary to extract models suita...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 周天舒
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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