47 results about "Diode modelling" patented technology

A model for a silicon controlled rectifier includes three diode models connected in series, with the middle diode model being reverse biased. Each diode model corresponds to and can be configured to simulate DC operation of a junction in the silicon controlled rectifier. The model can be used to evaluate behavior of a circuit that includes the silicon controlled rectifier. For example, the circuit can include an electrostatic discharge protection circuit that includes the silicon controlled rectifier.

The invention discloses a method for PID (potential introduced degradation)of a string The method comprises that: an inverter starts sub-array level IV scanning under a radiation condition and collects open-circuit voltage and assembly temperature of a solar battery set of each string in the sub-array; for each string, a assembly open-voltage temperature coefficient and practically-measured assembly temperature are utilized to calibrate practically-measured open-circuit voltage of the string in order to obtain calibrated open circuit voltage; theoretic open-circuit voltage of a string having no PID under the radiation condition is calculated according to a diode model; a ratio of the calibrated open-circuit voltage of each string to the theoretic open circuit voltage is calculated; comparison is made on the ratio of each string in the sub-array and the first threshold value to obtain a quantity of strings, the ratios of which are smaller than the first threshold value; if the quantity is greater than a second threshold, the sub-array has PID . The method for detecting the PID string is low in misjudgment, easy to operation easy to calculation and high in accuracy.

The invention relates to a simulation model of a junction field-effect transistor. The simulation model comprises a core field-effect transistor model, a first diode model, a second diode model, a third diode model and a fourth diode model, wherein a current-voltage characteristic of the core field-effect transistor model is fit by adopting parameters of BSIM3 / BSIM4; the first diode model is connected between a grid and a drain of the core field-effect transistor model; the second diode model is connected between the grid and a source of the core field-effect transistor model; the third diode model is connected between the drain of the core field-effect transistor model and a body electrode; the fourth diode model is connected between the source of the core field-effect transistor model and the body electrode; and the first diode model, the second diode model, the third diode model and the fourth diode model are used for describing a capacitance-voltage characteristic and a leakage current characteristic of an internal parasitic diode of the junction field-effect transistor. Furthermore, the invention further relates to a simulation method of the junction field-effect transistor. The simulation precision of the junction field-effect transistor is higher.

The invention discloses a method for predicting the temperature characteristics of a concentrating photovoltaic module that introduces a tunnel junction mechanism. The invention simplifies the 3D distributed circuit tunnel junction model into a two-dimensional lumped model, that is, the tunnel junction is equivalent to a circuit element , taking the dual-diode model of a concentrating triple-junction cell as an example, the tunnel junction equivalent model is used to replace the equivalent series resistance, and a clear The circuit relation formula determines the initial value of each parameter, and extracts several sets of parameter values ​​through mathematical iterative fitting, and then compares them with the experimental measurement results to obtain the best parameter set to make the I‑V characteristic curve fitting convergence of the module better Well, reasonable estimation of the I‑V characteristic curve of the module under high concentration conditions will not only help people better understand the working mechanism of the tunnel junction, but also improve the optimization efficiency of MJSC and reduce the MJSC design and optimization costs.