88 results about "Metal oxide silicon" patented technology

A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET. The SOI MOSFET is adapted to have a selected average time-to-breakdown, responsive to the first and second determinations, and the circuit is operated using techniques for accumulated charge control operatively coupled to the SOI MOSFET. In one embodiment, the accumulated charge control techniques include using an accumulated charge sink operatively coupled to the SOI MOSFET body.

[Problem]

A microbial pesticidal composition containing viable spores of a bacterium belonging to the genus Bacillus and a chemical pesticide, in which the spores can be preserved stably in a living state for a long period of time, and a method for preserving the spores stably in a living state for a long period of time, are provided.

[Dissolution Means]

Viable spores of Bacillus subtilis and/or Bacillus amyloliquefaciens are blended with at least one member selected from a metal oxide, a metal hydroxide, a metal oxide silicic acid salt, and a metal hydroxide silicic acid salt.

A molecular detection chip including a metal oxide silicon-field effect transistor (MOSFET) on sidewalls of a micro-fluid channel and a molecular detection device including the molecular detection chip are provided. A molecular detection method, particularly, qualification methods for the immobilization of molecular probes and the binding of a target sample to the molecular probes, using the molecular detection device, and a nucleic acid mutation assay device and method are also provided. The formation of the MOSFET on the sidewalls of the micro-fluid channel makes easier to highly integrate a molecular detection chip. In addition, immobilization of probes directly on the surface of a gate electrode ensures the molecular detection chip to check for the immobilization of probes and coupling of a target molecule to the probes in situ.

An insulation layer may be formed on an object having a contact region. The insulation layer may be partially etched to form an opening exposing the contact region. A material layer including silicon and oxygen may be formed on the exposed contact region. A metal layer may be formed on the material layer including silicon and oxygen. The material layer including silicon and oxygen may be reacted with the metal layer to form a metal oxide silicide layer at least on the contact region. A conductive layer may be formed on the metal oxide silicide layer to fill up the opening.

A light-shieldable film is formed on one principal plane of an optically transparent substrate, and the light-shieldable film has a first light-shieldable film and a second light-shieldable film overlying the first light-shieldable film. The first light-shieldable film is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.

Optimization of the implantation structure of a metal oxide silicon field effect transistor (MOSFET) device fabricated using conventional complementary metal oxide silicon (CMOS) logic foundry technology to increase the breakdown voltage. The techniques used to optimize the implantation structure involve lightly implanting the gate region, displacing the drain region from the gate region, and implanting P-well and N-Well regions adjacent to one another without an isolation region in between.

A logical building block and method of using the building block to design a logic cell library for CMOS (Complementary Metal Oxide Silicon) ASICs (Application Specific Integrated Circuits) is disclosed. Different logic gates, built with the same building block as described in this invention, will have the same schematics of transistor connection and also the same physical layout so that they appear to be physically identical under optical or electron microscopy. An ASIC designed from a library of such logic cells is strongly resistant to a reverse engineering attempt.

A capacitance circuit assembly mounted on a semiconductor chip, and method for forming the same, comprising a plurality of divergent capacitors in a parallel circuit connection between first and second ports, the plurality comprising at least one Metal Oxide Silicon Capacitor and at least one capacitor selected from the group comprising a Vertical Native Capacitor and a Metal-Insulator-Metal Capacitor. In one aspect, the assembly has vertical orientation, the Metal Oxide Silicon capacitor located at the bottom and defining the footprint, middle Vertical Native Capacitor comprising a plurality of horizontal metal layers comprising a plurality of parallel positive plates alternating with a plurality of parallel negative plates. In another aspect, a vertically asymmetric orientation provides a reduced total parasitic capacitance.

The invention relates to the field of circuit design, and discloses a novel crystal oscillator circuit. A principal oscillation metal-oxide-silicon (MOS) tube circuit is imaged, bias of a principle oscillation tube is indirectly controlled by controlling direct-current bias of an imaging tube, so that a direct-current level of a sinusoidal signal outputted by the crystal oscillator is biased to a preset value, control over the direct-current level of the output signal is realized, Miller compensation can be used for compensating the stability of a negative feedback control loop, and the stability of the system is guaranteed on the premise that not a very large chip area is occupied. An output signal of a peak detection circuit is compared with a second fixed level by a second operational amplifier so as to dynamically adjust a value of a bias current and to ensure that the output signal is maintained at preset amplitude.

The present invention relates to a CMOS (Complementary Metal Oxide Silicon) image sensor; and, more particularly, to an image sensor integrated into one chip, together with a memory. The CMOS image sensor according to the present invention comprises: a pixel array formed on a chip, having a plurality of unit pixels; a logic circuit formed on the chip to process signals form the pixel array; and a memory formed on the chip to store outputs from the logic circuit, wherein the pixel array, the logic circuit and the memory are isolated from each other by insulating layers, whereby the pixel array, the logic circuit and the memory are integrated on the same chip.

Disclosed is a method for detecting properties of a Metal Oxide Silicon (MOS) varactor, which includes: establishing a MOS varactor model equation in conjunction with an area of a gate; calculating values of the coefficients of the MOS varactor model equation through measurements for test materials; and extracting the properties of a capacitor of the MOS varactor using the calculated values of the coefficients. According to the method, the MOS varactor model equation can be expressed by C_gate=[Ci_gate×Area+Cp_gate×Perimeter]×N, wherein, C_gate denotes gate capacitance for voltage applied to the gate, Ci_gate denotes intrinsic gate capacitance, Cp_gate denotes perimeter gate capacitance, and N denotes the number of gate fingers. The MOS varactor model equation can be applicable to various sized capacitors, so that it is possible to estimate a gate capacitance for voltage applied to a gate, considering the differences due to the surface shapes of a device.

The present invention provides a MOS (Metal-Oxide-Silicon) device having mitigated threshold voltage roll-off and a threshold voltage roll-off mitigation method therefor. The MOS device includes: a substrate, a well region, an isolation region, a gate, two LDDs (Lightly-Doped-Drains), a source, a drain and a compensation doped region. The compensation doped region is substantially in contact with at least a part of a recessed portion along the channel length direction. Viewing from a cross-section view, at a boundary where the compensation doped region is in contact with the isolation region along the channel length direction, the compensation doped region has two doped region widths along the channel width direction, wherein, the two doped region widths of the compensation doped region are both not greater than 10% of the width of the operation region. Two doped region widths are defined as distances within an interior part and an exterior part of the operation region, respectively.

The invention relates to an anti-slide valve power supply control circuit of a high speed train. The anti-slide valve power supply control circuit mainly comprises an isolation optical coupler, an MOSFET (Metal-Oxide-Silicon Field-Effect Transistor), a Darlington transistor, two charging and discharging capacitors, a power supply control relay and necessary resistors. The circuit smartly utilizes the matching of the MOSFET and the Darlington transistor to respectively complete charging and discharging of capacitors so that the relay keeps an electrification state when PWM (Pulse Wavelength Modulation) signals are input. The make-and-break of the MOSFET (Metal-Oxide-Silicon Field-Effect Transistor) and the Darlington transistor is realized through the PWM signals so as to realize charging and discharging of the capacitors in each stage and maintain the control of a driving output relay. When the PWM control signals are in failure, the relay can be quickly cut off, and an anti-slide power supply is reliably cut off under the condition that the anti-slide valve or a driving circuit thereof or the anti-slide valve power supply control circuit is in failure, so that normal work of a braking system is ensured, and the safety and reliability of the braking system and the high speed train are improved.

Provided is a method of fabricating a complementary metal oxide silicon image sensor. The method includes: applying a passivation oxide and a passivation nitride after forming a pad; selectively removing the passivation nitride in a pad region and a pixel region by a photolithography process, and performing a first cleaning process; performing a hydrogen anneal process; opening the pad by removing the passivation oxide in the pad region and performing a second cleaning process; applying a pad protective layer; performing a color filter array process, a planarization process, and a microlens process after the applying of the pad protective layer; and removing the pad protective layer in the pad region.

The present invention is directed to a trimming circuit and method for replica type voltage regulators. A voltage regulator circuit includes an operational amplifier (OPAMP) and a n-type metal oxide silicon (NMOS) device. An output of the OPAMP is coupled to a gate terminal of the NMOS device. The voltage regulator circuit includes a potential divider circuit comprising a plurality of discrete devices coupled in series. A source terminal of the NMOS device is coupled to the potential divider circuit to form an output feedback node. The body of the NMOS device is biased variably across a plurality of tap points formed between consecutive discrete devices in the potential divider circuit.

A negative voltage detection circuit for a synchronous rectifier metal oxide silicon field effect transistor (MOSFET). The circuit comprises a reference current source, a first circuit mirroring a first current based upon the reference current source and generating a first voltage based upon a detection voltage, a second circuit mirroring a second current based upon the reference current source and generating a second voltage, and a comparator having input ends to receive the first voltage and the second voltage, wherein a level of an output voltage of the comparator changes when the detection voltage is equivalent to a value predetermined according to a difference between the first current and the second current.

A method of integrating a silicon-oxide-nitride-oxide-silicon (SONOS) transistor into a complementary metal-oxide-silicon (CMOS) baseline process. The method includes the steps of forming the gate oxide layer of at least one metal-oxide-silicon (MOS) transistor prior to forming a non-volatile (NV) gate stack of the SONOS transistor.

The invention discloses a method for producing a crystalline-state high-K gate dielectric material, which comprises the following steps that: an amorphous high-K gate dielectric material is deposited on a single-crystal underlay, and the amorphous high-K gate dielectric material is crystallized to the crystalline-state high-K gate dielectric material through an annealing process; or the crystalline-state high-K gate dielectric material is directly epitaxially grown on a germanium (Ge) underlay. Due to the adoption of the method for producing the crystalline-state high-K gate dielectric material provided by the invention, crystallographic lattice constant of the crystalline-state high-K gate dielectric material grown on Ge is approximate to that of the Ge, an interface structure with low-flaw density can be formed, so the interface state problem of a Ge-based metal oxide silicon (MOS) field effect transistor can be solved, and a Ge-based MOS part with high performance can be further obtained.