14 results about "Metal oxide silicon" patented technology

The invention relates to the technical field of batteries, in particular to a core-shell material, a preparation method, a negative electrode material and a battery. The method provided by the invention comprises the following steps: processing metal salt raw materials of aluminum, iron, cobalt, nickel, zinc and lanthanum into a high-entropy metal oxide; taking silicon particles as a core layer, gasifying a high-entropy metal oxide, and depositing the gasified high-entropy metal oxide on the surface of the core layer to form a coating layer so as to obtain Si (at) HEO particles; depositing a zinc layer on the Si-coated HEO particles to form a growth layer on the surface of the coating layer, dispersing the Si-coated HEO particles in a Si-coated HEO solvent, adding a zinc nitrate aqueous solution and a 2-methylimidazole aqueous solution for reaction, and growing a shell layer on the growth layer on the surface of the coating layer to obtain Si-coated HEO-ZIF particles; and mixing the acidic solution and the Si (at) HEO (at) ZIF particles to form a secondary pore channel, and separating to obtain the core-shell material. The core-shell material provided by the invention solves the problems of low stress dispersion efficiency, low ion transmission and poor volume expansion rate of the existing core-shell material.

To provide a semiconductor device with a novel structure.SOLUTION: A semiconductor device includes: a silicon substrate; and a device provided above the silicon substrate. The device includes: a transistor; and a conductor. The transistor includes a metal oxide to a channel formation region. A conductivity is applied to the silicon substrate. The conductor is electrically connected to a drain of the transistor and the silicon substrate via an open part provided to the device. A heat radiation of the drain of the transistor can be effectively performed via the silicon substrate.SELECTED DRAWING: Figure 1

The invention provides a method for forming a high-dielectric metal oxide, which comprises the following steps of: preparing silicon dioxide by doping a small amount of a precursor mainly comprising silane amine (Trisilylamine, TSA and N (SiH3) 3), and doping the silicon dioxide into a high-dielectric metal oxide which takes an organic metal compound as a precursor, so as to form a high-efficiency high-dielectric metal oxide with a good interface layer with a base material; according to the present invention, the electric leakage phenomenon of the metal-high dielectric metal oxide-silicon (MIS) structure can be effectively avoided, the high dielectric constant, the low leakage current, the high breakdown voltage, the high reliability and the like of the transistor gate electrode oxide layer can be achieved, and the production cost can be reduced.

The invention discloses a supported heat-resistant additive, which is prepared from the following ingredients in percentage by mass: 30 to 69.5 percent of hexagonal boron nitride nanosheets, 30 to 69.5 percent of metal oxides and 0.5 to 5 percent of silane coupling agents. The preparation method comprises the following steps: S1, carrying out plasma ball milling on hexagonal boron nitride particles to obtain partially stripped boron nitride powder; s2, dispersing the powder in a mixed solution of isopropanol, ethanol and water, adding a silane coupling agent, performing ultrasonic treatment and high-speed centrifugation, taking supernatant liquid, and performing freeze drying to obtain silane modified boron nitride nanosheets; s3, mixing the silane modified boron nitride nanosheet with an alcohol solvent, mixing a metal oxide with ethanol, and fully dissolving; mixing the two mixed solutions, adding excessive sodium hydroxide, transferring the mixed solutions into a reaction kettle, and carrying out solvothermal reaction; and after the reaction is completed, collecting a solid precipitate through high-speed centrifugation, and drying to obtain the heat-resistant additive of the boron nitride nanosheet loaded with the metal oxide. The high temperature resistance of the silicone rubber can be remarkably improved.

The invention provides a negative electrode composite current collector, a preparation method thereof and a lithium ion battery. The negative electrode composite current collector comprises a base material layer, a first modified layer, a second modified layer, a first conductive layer and a second conductive layer, wherein the material of the base material layer is selected from an organic polymer material; the first modified layer is arranged on the surface of one side of the base material layer; the second modified layer is arranged on the surface of the other side of the base material layer; the first conductive layer is arranged on the surface of one side, away from the substrate layer, of the first modified layer; the second conductive layer is arranged on the surface of one side, away from the substrate layer, of the second modified layer; the preparation method of the first modified layer and the second modified layer comprises the following steps: S1, mixing an organic compound containing one or more of ureido, amino and acylamino, a cellulose ether compound, a transition metal oxide, a silane coupling agent and a solvent to obtain a mixed system; and S2, coating the surfaces of the two sides of the base material layer with the mixed system, and carrying out a curing reaction to obtain the first modified layer and the second modified layer.

This invention relates to the field of battery technology, and particularly to a core-shell material, a preparation method, a negative electrode material, and a battery. The method provided by this invention includes processing metal salts of aluminum, iron, cobalt, nickel, zinc, and lanthanum into high-entropy metal oxides; using silicon particles as the core layer, vaporizing the high-entropy metal oxides and depositing them on the surface of the core layer to form a coating layer to obtain Si@HEO particles; depositing a zinc layer on the Si@HEO particles to form a growth layer on the surface of the coating layer, then dispersing it in a Si@HEO solvent and adding an aqueous solution of zinc nitrate and 2-methylimidazole to react, causing the growth layer on the surface of the coating layer to grow a shell layer to obtain Si@HEO@ZIF particles; mixing the acidic solution with the Si@HEO@ZIF particles to form secondary channels, and then separating to obtain the core-shell material. The core-shell material provided by this invention solves the problems of low stress dispersion efficiency, low ion transport, and poor volume expansion rate of existing core-shell materials.

This application discloses a secondary battery and an electrical device. The secondary battery of this application includes: a negative electrode sheet, which comprises a negative electrode current collector layer, a negative electrode active material layer disposed on the negative electrode current collector layer, and a first negative electrode protective layer disposed on one side of the negative electrode current collector layer. The first negative electrode protective layer comprises metal oxide, silicon oxide, and metal phosphate. The negative electrode active material layer is disposed between the negative electrode current collector layer and the first negative electrode protective layer. The first negative electrode protective layer disposed on one side of the negative electrode sheet of this application can effectively reduce the risk of thermal runaway during a short circuit within the battery, prevent the battery from catching fire or exploding, and improve the battery's safety performance.

The utility model provides a temperature adjusting nano composite film. The temperature adjusting nano composite film comprises a transparent substrate and a nano composite film layer arranged on the surface of one side of the transparent substrate. The nano composite film layer comprises metal oxide layers and nano metal layers, and the metal oxide layers and the nano metal layers are sequentially and alternately arranged in the direction away from the transparent substrate; the number of the metal oxide layers is 1-9; the number of the nanometer metal layers is 1-9. According to the composite film provided by the utility model, the surface of the transparent substrate is plated with the nano-metal, the metal oxide and the silicon compound to form the composite nano-film, so that the dustproof, heat-insulating and anti-ultraviolet effects are achieved in an inorganic film manner, and meanwhile, after being further electrified, the composite film also has a heating function; the glass has the advantages of heat insulation, infrared resistance, ultraviolet resistance, high visible light transmittance and the like.

A novel plasma catalyst in the form of a ceramic-matrix nanocomposite for application to plasma-assisted combustion is disclosed, the plasma catalyst comprising a nanoporous wafer and crystalline nanowhiskers fixed thereon. The novel functionality of the nanoceramic plasma catalyst is driven by the synergistic effect of plasma and solid. Plasma catalysts based on combinations of valve metal oxides, polar transition metal oxides, rare earth oxides and phosphides, alkali metal oxides, silicon oxides and nitrides, etc. are disclosed. One of the components has ferroelectric properties. The advantages of the combination of heterogeneous catalysis and plasma catalytic effects allow for utility for large-area applications and are scalable for large-scale industry.

The invention relates to conductive paste and application thereof. The conductive paste comprises the following components: 80-91 wt% of silver powder, 1.0-7.0 wt% of a glass powder system and 5-20 wt% of an organic system, the glass powder system comprises silicate glass, vanadate glass and metal oxides, the silicate glass at least comprises 10%-40% of lead fluoride and 3%-25% of tungsten oxide, the vanadate glass at least comprises 10%-50% of vanadium pentoxide and 15%-35% of bismuth oxide, and the metal oxides at least comprise 10%-40% of tellurium oxide and 1%-15% of copper oxide. The conductive paste can solve the problem that good contact cannot be formed under a thinned poly layer.

The present disclosure provides a cylindrical battery monomer, a battery device, and a power consumption device. The cylindrical battery monomer comprises a shell, an electrode assembly, and an electrolyte. The electrode assembly comprises a negative electrode sheet and a positive electrode sheet. The negative electrode sheet comprises a negative electrode current collector and a negative electrode film layer. The negative electrode film layer comprises a negative electrode active material. The negative electrode active material comprises a silicon-based material and a graphite material. The silicon-based material comprises Si elements. The mass percentage of Si elements is 0.5% or more based on the mass of the negative electrode film layer. The positive electrode sheet comprises a positive electrode current collector and a positive electrode film layer. The positive electrode film layer comprises a positive electrode active material. The positive electrode active material comprises a lithium transition metal oxide. The silicon-based material comprises one or more of silicon-carbon material and silicon-oxygen material. The silicon-based material contains alkali metal elements and / or alkaline earth metal elements. The kinematic viscosity of the electrolyte is 1.8 mm 2 / s to 3.5 mm 2 / s. The cylindrical battery monomer has high energy density and good fast charging cycle performance.

A semiconductor device having a novel structure is provided. The semiconductor device includes a silicon substrate and a device provided above the silicon substrate. The device includes a transistor and a conductor. The transistor includes a metal oxide in a channel formation region. Conductivity is imparted to the silicon substrate. The conductor is electrically connected to each of a drain of the transistor and the silicon substrate through an opening provided in the device. Heat of the drain of the transistor can be efficiently released through the silicon substrate.

Semiconductor devices and methods, including metal oxide silicon field effect transistor (MOSFET) devices and methods. The semiconductor device, such as a MOSFET, includes two source regions; a drain region; two body regions, and a buffer region. Each of the two body regions contacts a different one of the two source regions. The buffer region is located between the two body regions, and contacts the two body regions. A doping concentration of the buffer region is less than a doping concentration of the two body regions.

Semiconductor devices and methods, including metal oxide silicon field effect transistor (MOSFET) devices and methods. A semiconductor device, such as a MOSFET, includes two source regions; a drain region; two main body areas; and a buffer region. Each of the two body regions is in contact with a different one of the two source regions. The buffer area is located between the two main body areas and makes contact with the two main body areas. The doping concentration of the buffer region is smaller than the doping concentration of the two main body regions.