Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for eliminating internal node of diode to rapidly simulate circuit

A diode and circuit equation technology, applied in the field of diode modeling and simulation, can solve problems such as lack of use value

Inactive Publication Date: 2012-12-26
北京华大九天科技股份有限公司
View PDF2 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, these two-node diode analytical models mentioned above are still lack of use value in industry

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for eliminating internal node of diode to rapidly simulate circuit
  • Method for eliminating internal node of diode to rapidly simulate circuit
  • Method for eliminating internal node of diode to rapidly simulate circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0051] The working principle of the circuit simulator is to calculate the model according to the input of the netlist (netlist), establish the circuit equation, and then solve it through the Solver. Such asfigure 1 As shown, the circuit simulator first reads the netlist (101), and the simulation Engine will generate a set of circuit node voltages or branch currents for model calculation, which is the initial value of the circuit (102). Utilize this group of state initial values, carry out the model calculation (103) of each device in the net list, finally obtain under the above initial value condition, the electrical characteristics of each device, this is the current I of each device, conductance G, charge Q and Capacitor C. A circuit solution matrix (104) is thus formed. Carry out the circuit equation solution (105) by Solver again, the circuit emulator can judge (106) to the obtained circuit state according to certain convergence conditions, see whether convergence, if con...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for eliminating an internal node of a diode to rapidly simulate a circuit, so as to rapidly simulate the circuit; the method performs approximation analysis to the electric equation of the diode, so as to equalize the three-node diode model comprising parasitic resistance into the two-node diode model after eliminating the internal node. The method provided by the invention considers all physical effects of the diode model of a current main circuit stimulator, such as high injection effect, tunnelling effect and reverse breakdown characteristic. The method provided by the invention can reduce the size of the circuit solving matrix under the condition of guaranteeing the convergence precision of the circuit, so as to greatly reduce the LU resolving time of the circuit matrix and improve the speed of the circuit stimulator.

Description

1. Technical field [0001] The invention belongs to the field of EDA (Electronic Design Automation), and in particular relates to a diode modeling and simulation method for eliminating internal nodes used for rapid simulation of integrated circuits. 2. Background technology [0002] Circuit simulation is an important link in the process of integrated circuit design. By simulating the circuit, the designer can predict the behavior of the circuit and detect errors in the early stage of circuit development, so as to avoid the discovery of chip performance that does not meet the requirements after production. Huge losses caused by demands. [0003] The process of circuit simulation is to establish electrical equations for the entire circuit at each node according to the device model and circuit Kirchhoff's law, and then iteratively perform this set of equations through Newton-Raphson (Newton-Ralphson) Solve to get the simulation results. [0004] As the scale of circuit design ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
Inventor 尚也淳陈志东陈光前
Owner 北京华大九天科技股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com