13 results about "Standard test condition" patented technology

The invention relates to the technical field of photovoltaic cell testing, and discloses a volt-ampere characteristic curve testing system for a high-power photovoltaic cell. The system comprises a multi-source data acquisition module, a cross-modal feature fusion module, a volt-ampere curve reconstruction module and a dynamic parameter adjustment module. The multi-source data acquisition module synchronously acquires real-time irradiance time sequence data, assembly temperature distribution data and a current and voltage sampling data set of a target photovoltaic array; the cross-modal feature fusion module performs feature interaction processing on the multi-source data to generate a fusion electrical feature matrix; a volt-ampere curve reconstruction module performs dynamic curve fitting based on the matrix to generate a volt-ampere characteristic curve under a standard test condition; and the dynamic parameter adjustment module executes parameter calibration according to the curve and outputs a test parameter dynamic adjustment strategy to the acquisition module. The system can eliminate environmental interference, optimize test parameters, guarantee long-term stable operation, and meet accurate test requirements of high-power photovoltaic cells.

The invention relates to the technical field of photovoltaic power generation detection, in particular to an outdoor photovoltaic module attenuation rate test method and test system, and the method comprises the steps: a multi-dimensional environment and operation data collection process; constructing and updating a digital twin reference model; a self-adaptive environment compensation and normalization process; and attenuation rate calculation and state evaluation. Nonlinear measurement errors caused by spectrum red shift / blue shift, large-angle incidence and a temperature hysteresis effect are effectively stripped, and real-time output data are mapped to equivalent performance data under a standard test condition, so that the measurement uncertainty is remarkably reduced, and sensitive capture and accurate calculation of a micro power attenuation trend are realized.

This application provides a method, electronic device, and storage medium for online power monitoring of photovoltaic modules. The method includes: constructing verification conditions; determining a valid test time based on pre-established verification conditions (string operating status verification, irradiance integer value verification, and irradiance stability verification); real-time power correction of the module based on the measured irradiance and cell temperature at the valid test time; determining the online power test value based on the corrected power value under the same integer irradiance reference value; when the integer irradiance reference value reaches a preset high irradiance threshold, correcting the online power test value to standard test conditions to obtain a comparable online power test value; determining the current control reference for the current test cycle based on its corresponding factory power correction value; and updating the dynamic iterative control reference based on the current control reference and historical control references to perform power anomaly monitoring. This application achieves accurate online testing and anomaly identification of photovoltaic module power.

Provided is a bifacial solar cell having a tandem structure that can generate electricity from light incident from both the front light-receiving surface side and the back light-receiving surface side. [Solution] A bifacial solar cell with a tandem structure has a top cell 10 and a bottom cell 20, which are different types of photoelectric conversion cells, arranged in this order from the top light receiving surface 6 side toward the bottom light receiving surface 7 side between a top light receiving surface and a bottom light receiving surface that can receive light, and a top cell 10 and a bottom cell 20, which are different types of photoelectric conversion cells, and which are arranged in this order from the top light receiving surface 6 side toward the bottom light receiving surface 7 side, and which is characterized in that the bottom cell 20 can receive light incident from the top light receiving surface 3 and light incident from the bottom light receiving surface, and under standard test conditions (STC), the magnitude of the photocurrent of the bottom cell 20 due to light 3 incident from the top light receiving surface is smaller than the magnitude of the photocurrent of the top cell 10 due to light 3 incident from the top light receiving surface.

Disclosed in the present invention is a parameter calculation method for a single-diode model for a photovoltaic module. The method comprises: firstly, on the basis of an equivalent circuit of a single-diode model, obtaining a model under standard test conditions, and associating model parameters with test environment parameters to obtain a model for any test environment; and then acquiring performance parameters of a photovoltaic module, which comprise a short-circuit current, an open-circuit voltage, the maximum power-point current, the maximum power-point voltage, a short-circuit current temperature coefficient and an open-circuit voltage temperature coefficient, and constructing a system of equations and solving same to obtain model parameters. The present invention can realize the modeling and parameter identification of a model only on the basis of product specification information provided by a module manufacturer, without a complete I-V curve, thereby achieving a strong guiding significance for simulation and production practices.

This application discloses a test execution method for negative bias temperature instability testing, belonging to the field of semiconductor technology. Addressing the technical problem of long test times and the need for extrapolation in negative bias temperature instability testing of semiconductor devices, this application, based on the power-law lifetime model of semiconductor devices, maps the standard test conditions for negative bias temperature instability testing to rapid test conditions with faster decay rates and no need for heating by increasing the gate voltage amplitude. This reduces the test time and heating time for semiconductor devices in negative bias temperature instability testing, thereby accelerating the testing process. Furthermore, in the equivalent process, the degradation degree of the semiconductor device under rapid test conditions and the rapid test time is equivalent to the degradation degree that occurs when operating under standard test conditions to the target lifetime. This allows the test results to be directly used as the evaluation index of the device at the target lifetime after the test is completed, without the need for further derivation.

The application relates to the field of photovoltaic system performance evaluation, and discloses a photovoltaic module string output characteristic quantification method and model under near shadow. The method inputs standard test condition electrical parameters of a photovoltaic module, including a short-circuit current, an open-circuit voltage, maximum power point parameters, a temperature coefficient, a cell type and a series-parallel topology structure inside the module, calculates module-level parameters based on a single-diode model, and maps the module-level parameters to cell-level parameters through the topology structure inside the module. In combination with irradiance and temperature under unshaded and shaded conditions, parameters such as photogenerated current and reverse saturation current are dynamically adjusted to calculate cell volt-ampere characteristics. Then, volt-ampere characteristic curves of cells, sub-strings, modules and module strings are integrated step by step to finally obtain voltage-current characteristics of the module string under near shadow. The method is suitable for full-cell modules, half-cell modules and heterojunction modules, and can quickly and accurately quantify the output characteristics of the module string under shading conditions.

The application relates to the technical field of electromagnetic simulation, in particular to a kind of electromagnetic parameter configurable structure simulation method of ceramic packaging high-voltage direct-current contactor. The method comprises the following steps: obtaining the geometric model of the ceramic packaging high-voltage direct-current contactor, measuring the time interval of the induced current generated by the magnetic ring after the main coil is energized under standard test conditions, and recording it as the induced delay reference value; when the contactor performs each switching action, the time interval between the energization of the main coil and the generation of the induced current in the magnetic ring in this action is monitored in real time, compared with the induced delay reference value, and the deviation degree sequence of each action is obtained; the synchronism of the moving iron core attraction process is judged according to the deviation degree sequence, the expected attraction force value of the moving iron core is reduced when the delay deviation degree increases, and the actual attraction force is generated. The application establishes a performance evaluation system based on induced delay, and converts the originally complex multi-physical field problem into a measurable time parameter.

The present application relates to a kind of metal bipolar plate coating life prediction method and system, obtains the time-voltage data of electric pile under standard test condition based on test bench, and the actual life M of reference coating of electric pile pole when operating to failure and corresponding coating failure feature.Through in low current density and / or variable load operation interval, introduce preset high potential pulse, generate the intensification test condition data for electrochemical test.According to the intensification test condition data of electric pile, respectively electrochemical test is carried out to the pole with reference coating and the pole with coating to be measured, obtains the cumulative test time when reference coating fails, and the cumulative test time when coating to be measured fails.Using the cumulative test time when reference coating fails and actual life M determines electrochemical offline acceleration coefficient, further using the cumulative test time when coating to be measured fails obtains the predicted life of coating to be measured.

This invention discloses an NFC-based intelligent testing method and system for photovoltaic modules. It collects NFC tag data and module nameplate parameters from the photovoltaic modules, and constructs a module archive chain after encryption verification to complete identity recognition and anti-counterfeiting verification. Next, it establishes a module-parameter correspondence through the module archive chain, forming a dynamically adapted parameter reference domain by combining factory baseline values ​​and attenuation deviation. Then, it performs dual correction of electrical parameter curves based on age attenuation and temperature compensation to generate a graded testing reference curve normalized to standard test conditions. Subsequently, it integrates IV curve feature extraction and infrared thermal imaging detection to achieve precise fault location. Finally, it generates diagnostic results including fault level assessment through fault mode matching and loss quantification calculation, realizing rapid identity authentication, dynamic performance evaluation, and accurate fault diagnosis of photovoltaic modules.

Provided is a bifacial solar cell that has a tandem structure, in which a front-side light-receiving surface and a rear-side light-receiving surface on which light can be incident, and a top cell 10 and a bottom cell 20 comprising photoelectric conversion cells of different types from each other and disposed between the front-side light-receiving surface 6 and the rear-side light-receiving surface 7, are provided in this order from the front-side light-receiving surface 6 side toward the rear-side light-receiving surface 7 side. The bifacial solar cell is characterised in that the bottom cell 20 can receive light incident from the front-side light-receiving surface and light incident from the rear-side light-receiving surface, and under standard test conditions (STC), the magnitude of the photovoltaic current of the bottom cell 20 due to light 3 incident from the front-side light-receiving surface is inferior to the magnitude of the photovoltaic current of the top cell 10 due to the light 3 incident from the front-side light-receiving surface.

The invention relates to the technical field of electromagnetic simulation, in particular to a simulation method for an electromagnetic parameter configurable structure of a ceramic packaging high-voltage direct-current contactor. The method comprises the following steps: acquiring a geometric model of the ceramic packaging high-voltage direct-current contactor, measuring a time interval of induced current generated by a branch magnetic ring of the geometric model after a main coil is electrified under a standard test condition, and recording the time interval as an induction delay reference value; when the contactor executes each switching action, the time interval between the time when the main coil is electrified and the time when the branch magnetic ring generates the induction current in the action is monitored in real time, and the time interval is compared with an induction delay reference value to obtain a deviation degree sequence of each action; and according to the deviation degree sequence, judging the synchronism of the movable iron core in the pull-in process, and when the delay deviation degree is increased, reducing the expected pull-in force value of the movable iron core to generate the actual pull-in force. According to the invention, a performance evaluation system based on induction delay is established, and the original complex multi-physical field problem is converted into measurable time parameters.

The invention discloses a test execution method for a negative bias temperature instability test, and belongs to the technical field of semiconductors. The method aims at solving the technical problems that the testing time of a semiconductor device is long and calculation is needed in a negative bias temperature instability test. According to the power law life model based on the semiconductor device, a standard test condition of a negative bias temperature instability test is mapped into a rapid test condition which can be faster in attenuation rate and does not need temperature rise by improving the grid voltage amplitude, so that the test time and the temperature rise time of the semiconductor device in the negative bias temperature instability test are shortened; and the test process of the semiconductor device is accelerated. Besides, during equivalence, the degeneration degree of the semiconductor device generated by the fast test time based on the fast test condition is equivalent to the degeneration degree generated when the semiconductor device runs to the target service life under the standard test condition; therefore, after the test of the semiconductor device is completed, the test result can be directly used as the evaluation index of the device during the target life, and secondary derivation is not needed.