Test method for light attenuation of photovoltaic module

Abstract

The invention discloses a test method for light attenuation of a photovoltaic module, comprising the following steps of: S1, selecting the photovoltaic module and performing initial test, and measuring the short circuit current Isc of the photovoltaic module under standard test condition; S2, opening an environment box, and preheating an xenon lamp with full spectrum to allow the irradiation to be stable; S3, putting the photovoltaic module in the S1 into the environment box, measuring the instantaneous short circuit current I instantaneous sc when the photovoltaic module enters the box, and meanwhile working out the immediate irradiation of the photovoltaic module according to a formula, and obtaining the period to be tested according to the immediate irradiation; S4, after the test in the S3 is completed, taking out the photovoltaic module and performing the power output test and EL test. According to the test method provided by the invention, the influence of optical radiation to the attenuation of the photovoltaic module is assessed through measuring the power attenuation of the photovoltaic module after optical radiation by the photovoltaic module, and thereby the performance of the photovoltaic module is assessed.

Description

technical field

[0001] The invention belongs to the field of photovoltaic module testing, and in particular relates to a method for testing light attenuation of a photovoltaic module. Background technique

[0002] Light-induced degradation (LID) refers to the phenomenon that the output power of solar cells or photovoltaic modules tends to stabilize after a large drop in the initial stage of use.

[0003] It is confirmed by various experiments that boron and interstitial oxygen in crystalline silicon are the main factors causing light attenuation of boron-doped Cz-Si solar cells. In the current traditional Cz single crystal silicon, oxygen is the main impurity in crystalline silicon, and atomic oxygen is in the interstitial position in the silicon body. After the boron-doped Cz-Si solar cell undergoes light or current injection, the boron and oxygen in the silicon body form a boron-oxygen complex, thereby reducing the minority carrier lifetime, resulting in a decrease in bat...