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Photoelectric conversion characteristics testing method and equipment for photoelectric switching equipment

A technology for photoelectric conversion and testing methods, which can be used in the testing of machine/structural components, optical instrument testing, and single semiconductor device testing, etc., and can solve problems such as difficulties and changes in output characteristics of stacked photoelectric conversion devices.

Inactive Publication Date: 2002-03-27
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is extremely difficult to calculate or correct changes in the output characteristics of stacked photoelectric conversion devices due to changes in the spectrum of sunlight

Method used

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  • Photoelectric conversion characteristics testing method and equipment for photoelectric switching equipment
  • Photoelectric conversion characteristics testing method and equipment for photoelectric switching equipment
  • Photoelectric conversion characteristics testing method and equipment for photoelectric switching equipment

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0142] Use the following method to test the output characteristics of the photoelectric conversion device (sample) as the object to be tested outdoors with sunlight. In this case, it is three three-layer solar cell modules. The structure of each solar cell module is from light incident to one Starting from the side, the Pin junction using amorphous silicon as the i-type layer (hereinafter referred to as the top cell) and the Pin junction using amorphous silicon germanium as the i-type layer (hereinafter referred to as the middle cell) and the amorphous silicon germanium as the i-type layer are sequentially stacked. The Pin junction of the -type layer (hereinafter referred to as the bottom battery).

[0143] The module configuration of each 3-layer solar cell is, in which 5 cells with a size of 35 cm × 24 cm formed on a single stainless steel substrate, connected in series, supported on a support plate via bypass diodes, and form a surface protection layer . The external dimen...

example 2

[0170] Measure the output characteristics of the laminated photoelectric conversion device under the standard test conditions with the same method as Example 1, except that the laminated photoelectric converter as the object to be tested becomes an a-Si / c-Si double-layer solar cell module, wherein, The Pin junction (hereinafter referred to as a-Si cell) uses amorphous silicon as the i-type layer, and the Pn junction (hereinafter referred to as c-Si cell) uses single crystal silicon as the n-type layer. The incident sides were superimposed, and the filters used for standard cells were changed.

[0171] The double-layer solar cell module is a so-called high-reliability module. The size of the module is 95cm×55cm, and there are 15 battery strings of serial double-layer solar cells×3 parallel double-layer solar cells connected to each other. Each double-layer solar cell can The cells are formed on single crystal silicon wafers measuring 10cm x 10cm. When measuring the spectral se...

example 3

[0175] In Example 3, a stacked photoelectric conversion device (sample cell) is used as the object to be tested, and 10 a-Si / μc-Si double-layer solar cells are stacked in sequence from the light incident side, wherein each a-Si / μc- The structure of the Si double-layer solar cell is that the Pin junction (hereinafter referred to as a-Si cell) uses amorphous silicon as the i-type layer, and the Pin junction (hereinafter referred to as μc-Si cell) uses microcrystalline silicon as the i-type layer. With the method of the present invention, the existing fixed-light sunlight simulator uses a xenon lamp as a light source for testing. The 10 samples were numbered #3-1...#3-10.

[0176] The a-Si / μc-Si bilayer solar cell is a cell formed on a single stainless steel substrate with a size of 15 cm×15 cm, and the cell is in a single unit state before being connected in series or parallel. The effective radiation area of ​​the solar simulator is 15cm×15cm. The temporal change rate of irra...

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Abstract

To provide a measuring method capable of measuring even a large-area stacked photoelectric conversion device such as a module or array either indoors or outdoors and accurately measuring the photoelectric conversion characteristics using an inexpensive measuring system, the photoelectric conversion characteristics of a photoelectric conversion device under irradiation light in a plurality of spectral states and a shift of the short-circuit current of each component cell of the photoelectric conversion device from the standard test condition are estimated, and the measured photoelectric conversion characteristics and the estimated shift are compared, thereby obtaining the photoelectric conversion characteristics of the photoelectric conversion device in the standard test conditions.

Description

technical field [0001] The present invention relates to a test method and test equipment for photoelectric conversion characteristics, more particularly to photoelectric conversion devices such as solar cells, photodiodes, photosensors or electrophotographic photosensitive bodies, especially the photoelectric conversion characteristics of stacked photoelectric conversion devices Test methods and test equipment. Background technique [0002] In the stacked photoelectric conversion device, a plurality of photoelectric conversion elements with different spectral sensitivities are stacked, and the long-wavelength light that cannot be completely absorbed by the upper layer photoelectric conversion element on the light incident side is absorbed by the lower layer photoelectric conversion element, thereby improving the output. or sensitivity. Therefore, these stacked photoelectric conversion devices are widely developed. [0003] It is important to accurately test the output char...

Claims

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Application Information

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IPC IPC(8): G01M11/00G01N21/00G01R31/00G01R31/26G06F15/12H01L31/00H01L31/18H02S50/10
CPCG01R31/2605H02S50/10Y02E10/50H02S50/15
Inventor 松山深照
Owner CANON KK
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