Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Phase change memory cell and manufacturing method

A memory cell, phase change technology, used in information storage, static memory, read-only memory, etc.

Active Publication Date: 2010-01-20
MACRONIX INT CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Problems arise when one wishes to fabricate devices of very small size within the tight process control variables required to manufacture memory devices at scale

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Phase change memory cell and manufacturing method
  • Phase change memory cell and manufacturing method
  • Phase change memory cell and manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0166] The following will compare Figure 1-23 The thin-film fuse phase-change memory cells, memory arrays thereof, and methods for manufacturing these cells of the present invention are described in detail. Figure 24-31 The embodiments are a first set of examples of phase change memory cells having higher and lower reset change temperature portions. Figure 32-41 Embodiments of the second set of examples of phase change memory cells have higher and lower reset change temperature portions.

[0167] The following description of the invention generally refers to specific structural embodiments and methods. It should be understood that there is no intent to limit the invention to the particular disclosed embodiments and methods. The method can be implemented using other features, elements, methods and embodiments. Similar elements in different embodiments are generally designated with similar reference numerals.

[0168] figure 1 The basic structure of a memory cell 10 is s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a phase change memory cell as part of the phase change memory device. The phase change memory cell includes first and second electrodes electrically coupled by a phase change element. At least a section of the phase change element comprises a higher reset transition temperature portion and a lower reset transition temperature portion. The lower reset transition temperature portion comprises a phase change region which can be transitioned, by the passage of electrical current therethrough, from generally crystalline to generally amorphous states at a lower temperature than the higher reset transition temperature portion.

Description

[0001] parties to a joint research contract [0002] International Business Machinery Corporation of New York, Macronix International Co., Ltd. of Taiwan, and Infineon Technologies A.G. of Germany are parties to the joint research contract. technical field [0003] The invention relates to a high-density storage device using phase-change storage materials and a manufacturing method thereof, and the phase-change storage materials include chalcogenide and other materials. Background technique [0004] Storage materials based on phase change are widely used in reading and writing optical discs. These materials include at least two solid phases, including, for example, a substantially amorphous solid phase and a substantially crystalline solid phase. Laser pulses are used in reading and writing optical discs to switch between the two phases and to read the optical properties of the material after the phase change. [0005] These phase-change memory materials, such as chalcogen...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00H01L27/24G11C11/56G11C16/02
Inventor 龙翔澜刘瑞琛陈士弘陈逸舟
Owner MACRONIX INT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products