Phase change memory cell and manufacturing method

Abstract

The invention relates to a phase change memory cell as part of the phase change memory device. The phase change memory cell includes first and second electrodes electrically coupled by a phase change element. At least a section of the phase change element comprises a higher reset transition temperature portion and a lower reset transition temperature portion. The lower reset transition temperature portion comprises a phase change region which can be transitioned, by the passage of electrical current therethrough, from generally crystalline to generally amorphous states at a lower temperature than the higher reset transition temperature portion.

Description

[0001] parties to a joint research contract [0002] International Business Machinery Corporation of New York, Macronix International Co., Ltd. of Taiwan, and Infineon Technologies A.G. of Germany are parties to the joint research contract. technical field [0003] The invention relates to a high-density storage device using phase-change storage materials and a manufacturing method thereof, and the phase-change storage materials include chalcogenide and other materials. Background technique [0004] Storage materials based on phase change are widely used in reading and writing optical discs. These materials include at least two solid phases, including, for example, a substantially amorphous solid phase and a substantially crystalline solid phase. Laser pulses are used in reading and writing optical discs to switch between the two phases and to read the optical properties of the material after the phase change. [0005] These phase-change memory materials, such as chalcogen...

AI Technical Summary

Problems solved by technology

[0008] Problems arise when one wishes to fabricate devices of very small size within the tight process control variables required to manufacture memory devices at scale

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