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Method for fabricating a cylindrical capacitor using amorphous carbon-based layer

An amorphous carbon, cylindrical technology used in the manufacture of semiconductor devices to reduce bridging

Inactive Publication Date: 2010-07-14
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, when the wet immersion out process is performed, the storage node 17 is not firmly supported, causing collapse and bridging of the storage node 17

Method used

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  • Method for fabricating a cylindrical capacitor using amorphous carbon-based layer
  • Method for fabricating a cylindrical capacitor using amorphous carbon-based layer
  • Method for fabricating a cylindrical capacitor using amorphous carbon-based layer

Examples

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Embodiment Construction

[0021] Figure 2A~2I It is a cross-sectional view of a manufacturing method of a cylindrical capacitor according to an embodiment of the present invention. specifically, Figure 2A~2I The shown cross-sectional view is when the capacitor structure is in Figure 3A-3E Obtained when cutting in the A-A' and B-B' directions shown.

[0022] refer to Figure 2A , an insulating layer 22 may be formed on the substrate 21 , and the insulating layer 22 may be etched to form a contact hole 230 . Hereinafter, the contact hole 230 is interchangeably referred to as a storage node contact hole 230 . The plug material fills the storage node contact hole 230 to form a contact plug 23 (or storage node contact plug 23). Hereinafter, the contact plug 23 is interchangeably referred to as a storage node contact plug 23 . Although not shown, transistors including word lines and bit lines may be formed on the substrate 21 before the insulating layer 22 is formed. The insulating layer 22 may be ...

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PUM

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Abstract

A method for fabricating a cylindrical capacitor. The method includes forming an isolation structure including an interlayer on a substrate, the substrate having a plurality of contact plugs formed therein, forming a plurality of opening regions by etching the isolation structure, thereby exposing selected portions of the contact plugs, forming storage nodes on a surface of the opening regions, etching selected portions of the isolation structure to form a patterned interlayer that encompasses selected portions of the storage nodes, thereby supporting the storage nodes, removing remaining portions of the isolation structure, and removing the patterned interlayer to expose inner and outer walls of the storage nodes.

Description

[0001] related application [0002] This application claims priority from Korean Patent Application No. 10-2006-0059251 filed on Jun. 29, 2006, which is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates to a method of manufacturing semiconductor devices, more particularly to a method of manufacturing cylindrical capacitors Background technique [0004] In dynamic random access memories (DRAMs), the design rules have shifted to miniaturization. Therefore, the size of the cell has also been reduced. As a result, the height of the cylindrical capacitor increases. In order to obtain a sufficient level of capacitance, it is necessary to reduce the thickness of the dielectric layer of the capacitor. This development is due to the fact that the capacitance of a capacitor is directly proportional to the electrode area and the dielectric constant of the capacitor's dielectric layer, and inversely proportional to the distance b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/82H01L21/8242H10B10/00H10B12/00
CPCH01L27/10852H01L28/91H10B12/033H01L27/04H10B12/00
Inventor 朴基善卢载盛吉德信宋翰相廉胜振金珍赫李起正
Owner SK HYNIX INC