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Method to reduce gas-phase reactions in a pecvd process with silicon and organic precursors to deposit defect-free initial layers

A technology of organosilicon compound and organosilicate, which is applied in metal material coating process, coating, gaseous chemical plating, etc.

Inactive Publication Date: 2008-01-23
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method can lead to undesired gas phase reactions that cause the formation of unwanted particles in the film, leading to defect problems

Method used

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  • Method to reduce gas-phase reactions in a pecvd process with silicon and organic precursors to deposit defect-free initial layers
  • Method to reduce gas-phase reactions in a pecvd process with silicon and organic precursors to deposit defect-free initial layers
  • Method to reduce gas-phase reactions in a pecvd process with silicon and organic precursors to deposit defect-free initial layers

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Experimental program
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Embodiment

[0052] The porogen-containing organosilicate dielectric layer may be deposited on the substrate according to the embodiments described above with respect to FIG. 1 . Films can use PRODUCE® available from Applied Materials, Inc. of Santa Clara, California.  The PECVD chamber (ie, CVD chamber) on the system performs the deposition. During deposition, the chamber pressure was maintained at a pressure of approximately 4.5 Torr and the substrate was maintained at a temperature of approximately 350°C. The substrate is set 300mil away from the gas distribution showerhead.

[0053] The substrate is placed on a substrate holder provided within the process chamber. A process gas mixture with an initial gas composition of 1000 seem helium and 700 seem oxygen for the interface layer was introduced into the chamber and the flow rate was stabilized before RF power was initiated. Subsequently, about 500 W of RF power was applied to the showerhead to form a plasma comprising an interfacia...

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Abstract

By disposing the substrate in a processing chamber with biased electrodes, and flowing a flow rate of one or more organosilicon compounds and a flow rate of one or more oxidizing gases into the processing chamber to apply RF power Depositing an initial layer on an electrode provides a method for depositing a low dielectric constant film. The flow rate of the organosilicon compound is then increased to a final flow rate to deposit the first transition layer upon which the one or more porogen compounds are introduced and the flow rate of the porogen compound is increased to the final deposition rate while depositing the second transition layer. The porogen doped silicon oxide layer was then deposited by flowing the porogen and silicone at a final flow rate until the RF power was turned off.

Description

technical field [0001] Embodiments of the invention generally relate to the fabrication of integrated circuits. More particularly, embodiments relate to methods for depositing dielectric layers on substrates and structures including dielectric layers. Background technique [0002] Since the introduction of semiconductor devices decades ago, their geometries have decreased significantly in size. Since then, integrated circuits have largely followed the two-year / half-size rule (commonly known as Moore's Law), which means that the number of devices integrated on a chip doubles every two years. Today's fabs routinely produce devices with 0.13 [mu]m or even 0.1 [mu]m feature sizes, and future fabs will soon be making devices with smaller geometries. [0003] To further reduce the size of devices on integrated circuits, there is an increasing need to use conductive materials with low resistivity and to use insulators with low dielectric constant (k) to reduce capacitive coupling...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/455C23C16/513C23C16/52
CPCC23C16/56C23C16/401C23C16/029C23C16/448C23C16/52
Inventor 康·萨布·伊姆开尔文·陈纳贾拉简·热迦戈帕兰约瑟芬·汝-伟·张刘桑·H·安易·正宋印易吴·恩奥·特·恩延亚历山大·T·德穆斯
Owner APPLIED MATERIALS INC