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Flash memory and method for manufacturing the same

A technology of flash memory and cell area, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., and can solve problems such as thickness difference, impact, and contact defects between the cell area and the peripheral area

Inactive Publication Date: 2008-01-30
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But, because the PMD material 8 in the cell region and the peripheral region is polished simultaneously in fact, after CMP processes, the uniformity of the interlayer dielectric layer deteriorates
For this reason, contact defects may occur due to the difference in thickness between the cell area and the peripheral area despite the CMP treatment
[0011] In particular, as flash memory becomes more highly integrated, non-uniformity between the cell area and the peripheral area adversely affects device characteristics

Method used

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  • Flash memory and method for manufacturing the same
  • Flash memory and method for manufacturing the same
  • Flash memory and method for manufacturing the same

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Embodiment Construction

[0018] Hereinafter, embodiments will be described with reference to the drawings.

[0019] 2A to 2H are diagrams illustrating steps for manufacturing a flash memory according to an embodiment.

[0020] As shown in FIG. 2A, a substrate 20 may be prepared and divided into a cell area and a peripheral area. A mask layer 22 may be deposited on the substrate 20, and part of the mask layer in the cell area may be removed from the substrate 20 area while remaining in the cell area. In one embodiment, mask layer 22 may be a photoresist film.

[0021] The etching process is performed by using the mask layer 22 as an etching mask to etch the substrate 20 in the cell region to a predetermined thickness t. Therefore, a step difference in depth t occurs between the substrate 20 of the cell region and the substrate 20 of the peripheral region. In other words, the substrate 20 of the cell region becomes lower by a depth t than the substrate 20 of the peripheral region.

[0022] After thi...

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Abstract

A flash memory device has a cell area and a peripheral area. In the method for manufacturing this flash memory, the substrate in the unit area is etched to a predetermined depth, and the first polysilicon layer and the ONO layer are formed on the substrate in the unit area; and the ONO layer and the peripheral area in the unit area A second polysilicon layer is formed on both substrates.

Description

Background technique [0001] Flash memory is a non-volatile memory that does not lose data stored therein even if the power is turned off. In addition, flash memory provides relatively high data processing speed for recording, reading and deleting data. Thus, flash memory is widely used in the BIOS of personal computers (PCs), set-top boxes, printers, and network servers to store data. Recently, flash memory is widely used in digital cameras and cellular phones. [0002] FIG. 1 is a schematic diagram showing a prior art flash memory. [0003] As shown in FIG. 1, the related art flash memory is divided into a cell area and a peripheral area. A cell region is provided to write and delete data, and a peripheral region is provided to operate transistors according to data writing and deleting operations. [0004] Isolation layer 2 is formed in the cell and peripheral regions on substrate 1 . [0005] Form a first polysilicon (poly-silicon) layer 4, an ONO layer 5 and a second p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8247H01L27/115H10B69/00
CPCH01L27/11526H01L29/7881H01L29/42324H01L27/105H01L27/11543H10B41/48H10B41/40
Inventor 洪志镐
Owner DONGBU HITEK CO LTD