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Information recording medium and method for producing the same

A technology of information recording and manufacturing methods, which is applied in the fields of optical record carrier manufacturing, temperature recording method, data recording, etc. It can solve the problems of inability to ensure the stability of the amorphous phase, the inability to realize the medium, and the drop in the crystallization temperature, so as to achieve record preservation Excellent performance, excellent record retention, and high erasing performance

Inactive Publication Date: 2008-06-04
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this case, the concentration of Ge decreases (in order to replace GeTe with SnTe), and the optical change decreases, thereby causing a decrease in signal quality and a decrease in the crystallization temperature, and there is a problem that the stability of the amorphous phase cannot be ensured.
In addition, the above-mentioned Ge-Bi-Te has only a crystallization speed sufficient for 16X speed, but there is a problem that the stability of the signal recorded at 16X speed (that is, the amorphous phase formed by 16X speed) cannot be ensured.
Thus, the two-layer structure of SnTe / Ge-Sb-Te, the Ge-Sn-Sb-Te layer, and the Ge-Bi-Te layer cannot realize a medium corresponding to recording at a high linear velocity and a wide velocity range.

Method used

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  • Information recording medium and method for producing the same
  • Information recording medium and method for producing the same
  • Information recording medium and method for producing the same

Examples

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Embodiment approach 1

[0047] As the first embodiment of the present invention, an example of an optical information recording medium that performs recording and reproduction of information using laser light will be described. Fig. 1 shows a partial cross section of the information recording medium.

[0048] The information recording medium 100 shown in FIG. 1 has a structure in which a reflective layer 106 is formed on the surface of one side of the substrate 107, a dielectric layer 105 is formed on the surface of the reflective layer 106, and a dielectric layer 105 is formed on the surface of the dielectric layer 105. The recording layer 104 is formed on the surface, the interface layer 103 is formed on the surface of the recording layer 104, the dielectric layer 102 is formed on the surface of the interface layer 103, and the cover layer 101 is formed. Here, the recording layer 104 includes structural layers from the first to the M-th, starting from the dielectric layer 125 side, an M-th structure la...

Embodiment approach 2

[0161] As the second embodiment of the present invention, an example of an information recording medium will be described. Fig. 2 shows a partial cross-section of the information recording medium.

[0162] The information recording medium 200 shown in FIG. 2 has a structure in which a substrate 214, an intermediate layer 208, a first information layer 240, and a cover layer 201 are arranged in this order. In order to distinguish the two information layers and the recording layer contained therein in relation to the medium 204 of the structure shown in FIG. 2, the layer closer to the incident light is referred to as "first" and the layer farther away is referred to as " 2nd".

[0163] More specifically, the second information layer 250 is formed by sequentially arranging a reflective layer 213, a dielectric layer 212, a second recording layer 211, an interface layer 210, and a dielectric layer 209 on one surface of the substrate 214. Among them, the second recording layer 211 inclu...

Embodiment approach 3

[0218] As the third embodiment of the present invention, an example of an information recording medium will be described. Fig. 3 shows a partial cross-section of the information recording medium.

[0219] The information recording medium 300 shown in FIG. 3 has a dielectric layer 302 formed on one surface of a substrate 301, an interface layer 303 is formed on the surface of the dielectric layer 302, and a recording layer 304 is formed on the surface of the interface layer 303. The interface layer 305 is formed on the surface of the recording layer 304, the dielectric layer 306 is formed on the surface of the interface layer 305, the light absorption correction layer 307 is formed on the surface of the dielectric layer 306, and the light absorption correction layer 307 The reflective layer 308 is formed on the surface, and the dummy substrate 310 is bonded by the adhesive layer 309. The recording layer 304 includes the first to the Mth structural layers, and the first structural l...

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Abstract

An information recording medium ensuring high recording and erase function and excellent archival characteristic at a high linear velocity and over a wide range of linear velocities is provided. Such a medium is obtained by constructing a recording layer which has a composition that can generate phase change as a whole, of a first through an M-th constituent layers (wherein M is an integer of 2 or greater) which are stacked in a thickness direction, such that elemental compositions of contiguous an m-th constituent layer and a (m+1)th constituent layer are different from each other (wherein m is an integer and satisfies 1≰m≰M) assuming that the constituent layer located at an m-th position from a laser light incident side is the m-th constituent layer. In this information recording medium, at least one m-th constituent layer constituting the recording layer preferably includes at least one element selected from Te, Bi, Sb, Ge, In, Ga, Al, Sn, Pb, Se and Si.

Description

Technical field [0001] The present invention relates to an information recording medium for optically or electrically recording, erasing, rewriting, and reproducing information, and a manufacturing method thereof. Background technique [0002] The inventor developed 4.7GB / DVD-RAM (hereafter, DVD-RAM), a rewritable information recording medium that can be used as data files and image files, and commercialized it in 2000. In the first DVD-RAM after practical use, the recording layer has a two-layer structure of SnTe / Ge-Sb-Te (for example, Japanese Patent Laid-Open No. 2001-209970). This is the high-speed crystallization material used in conventional products before the phase transition layer composed of Ge-Sb-Te (for example, refer to Japanese Patent No. 2584741), the crystallization energy composed of SnTe with strong crystallinity is provided. Improve the structure of the layer. [0003] In addition, Ge-Sn-Sb-Te (for example, refer to Japanese Patent Laid-Open No. 2001-322357) as...

Claims

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Application Information

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IPC IPC(8): G11B7/24G11B7/26B41M5/26G11B7/24035G11B7/24038G11B7/24041G11B7/243G11B7/2433G11B7/2533
CPCG11B7/243G11B7/2533G11B7/24038Y10T428/21
Inventor 儿岛理惠山田升
Owner PANASONIC CORP
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