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Information recording medium and method for producing the same

A technology for information recording and manufacturing methods, which is applied in the manufacture of optical record carriers, temperature recording methods, data recording, etc., can solve the problems of inability to realize media, inability to ensure the stability of amorphous phases, and drop in crystallization temperature, and achieve excellent recording. The effect of excellent preservation and record preservation, and high erasing performance

Inactive Publication Date: 2011-03-02
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this case, the concentration of Ge decreases (in order to replace GeTe with SnTe), and the optical change decreases, thereby causing a decrease in signal quality and a decrease in the crystallization temperature, and there is a problem that the stability of the amorphous phase cannot be ensured.
In addition, the above-mentioned Ge-Bi-Te has only a crystallization speed sufficient for 16X speed, but there is a problem that the stability of the signal recorded at 16X speed (that is, the amorphous phase formed by 16X speed) cannot be ensured.
Thus, the two-layer structure of SnTe / Ge-Sb-Te, the Ge-Sn-Sb-Te layer, and the Ge-Bi-Te layer cannot realize a medium corresponding to recording at a high linear velocity and a wide velocity range.

Method used

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  • Information recording medium and method for producing the same
  • Information recording medium and method for producing the same
  • Information recording medium and method for producing the same

Examples

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Effect test

Embodiment approach 1

[0047] As Embodiment 1 of the present invention, an example of an optical information recording medium in which information is recorded and reproduced using laser light will be described. figure 1 A partial cross section of the information recording medium is shown.

[0048] Such as figure 1 The information recording medium 100 shown has the following structure, that is: a reflective layer 106 is formed on the surface of one side of the substrate 107, a dielectric layer 105 is formed on the surface of the reflective layer 106, and a dielectric layer 105 is formed on the surface of the dielectric layer 105. For the recording layer 104 , the interface layer 103 is formed on the surface of the recording layer 104 , the dielectric layer 102 is formed on the surface of the interface layer 103 , and the cover layer 101 is further formed. Here, the recording layer 104 includes structural layers from the first to the Mth, and starting from the side of the dielectric layer 125, the Mt...

Embodiment approach 2

[0161] An example of an information recording medium will be described as Embodiment 2 of the present invention. figure 2 A partial cross section of the information recording medium is shown.

[0162] figure 2 The information recording medium 200 shown has a structure in which a substrate 214, an intermediate layer 208, a first information layer 240, and a cover layer 201 are arranged in this order. in order to be with figure 2 The medium 204 having the structure shown in the figure distinguishes two information layers and the recording layers contained therein, and the layer closer to the incident light is called "first", and the layer farther away is called "second".

[0163] More specifically, the second information layer 250 is formed by sequentially disposing a reflective layer 213 , a dielectric layer 212 , a second recording layer 211 , an interface layer 210 , and a dielectric layer 209 on one surface of a substrate 214 . Among them, the second recording layer 21...

Embodiment approach 3

[0218] An example of an information recording medium will be described as Embodiment 3 of the present invention. image 3 A partial cross section of the information recording medium is shown.

[0219] image 3 The shown information recording medium 300 has: a dielectric layer 302 is formed on one surface of a substrate 301, an interface layer 303 is formed on the surface of the dielectric layer 302, a recording layer 304 is formed on the surface of the interface layer 303, and An interface layer 305 is formed on the surface of the recording layer 304, a dielectric layer 306 is formed on the surface of the interface layer 305, a light absorption correction layer 307 is formed on the surface of the dielectric layer 306, and a light absorption correction layer 307 is formed on the surface of the light absorption correction layer 307. A reflective layer 308 is provided, and a dummy substrate 310 is bonded via an adhesive layer 309 . The recording layer 304 includes the first to ...

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Abstract

An information recording medium ensuring high recording / erasing function and excellent record storage properties at high line speed and over a wide line speed range. Such an information medium is obtained by forming a recording layer, having a composition capable of causing phase variation as a whole, of composition layers from first through M-th (M is an integer of 2 or above) layers laid in thethickness direction such that adjacent m-th and (m+1)th composition layers have element compositions different from each other assuming a composition layer located at an m-th position from the laser light incident side is the m-th composition layer (m is an integer satisfying 1=m=M). In the information recording medium, at least one m-th composition layer constituting the recording layer preferably contains at least one element selected from Te, Bi, Sb, Ge, In, Ga, Al, Sn, Pb, Se and Si.

Description

technical field [0001] The present invention relates to an information recording medium for optically or electrically recording, erasing, rewriting, and reproducing information, and a manufacturing method thereof. Background technique [0002] The inventors developed a 4.7 GB / DVD-RAM (hereinafter, DVD-RAM) as a rewritable information recording medium that can be used as a data file and an image file, and commercialized it in 2000. In the first practical DVD-RAM, the recording layer has a two-layer structure of SnTe / Ge-Sb-Te (for example, Japanese Patent Laid-Open No. 2001-209970). This is the crystallization ability of placing SnTe with strong crystallinity before the phase transition layer composed of Ge-Sb-Te (for example, refer to Japanese Patent No. 2584741), which is a high-speed crystallization material used in conventional products. Improve layer structure. [0003] In addition, Ge-Sn-Sb-Te is used as a material for the recording layer of DVD-RAM after practical use...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11B7/24G11B7/26B41M5/26G11B7/24035G11B7/24038G11B7/24041G11B7/243G11B7/2433G11B7/2533
CPCG11B7/2533G11B7/243G11B7/24038Y10T428/21
Inventor 儿岛理惠山田升
Owner PANASONIC CORP
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