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Writing circuit and method for flash memory

A technology for writing circuits and flash memory, applied in information storage, static memory, adjusting electrical variables, etc., can solve the problems of high difficulty in circuit implementation, decreased accuracy, and large chip area, shortening writing time, and reducing design complexity. degree and effect

Active Publication Date: 2011-03-16
MACRONIX INT CO LTD
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  • Abstract
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Problems solved by technology

However, this method needs to gradually change the voltage of the drain and monitor its current. The charge pump needs to provide a stable voltage change and a current detection circuit. It is difficult to implement the circuit, and the required chip area may also be large.
And use the time of the current slump to judge whether the writing state is completed or not, the specificity of the components after writing will be quite different, and the threshold voltage after writing is difficult to control, which will reduce the accuracy of reading

Method used

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  • Writing circuit and method for flash memory
  • Writing circuit and method for flash memory
  • Writing circuit and method for flash memory

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Embodiment Construction

[0019] figure 1 It is a circuit diagram of a writing circuit of a flash memory according to an embodiment of the present invention. The writing circuit 100 includes a writing unit 110 and a detecting unit 120 , and the writing unit 100 is used to perform a writing operation on the storage element FM in the storage unit 130 . In this embodiment, the storage element FM is a floating gate memory, that is, a type of flash memory. The control gate of the storage element FM is coupled to a word line, and the word line can apply a word line voltage V to the control terminal (control gate) of the storage element FM. WL .

[0020] The write circuit 100 is coupled to the write terminal (drain) of the memory element FM, and the source of the memory element FM is coupled to the ground terminal GND. When the memory element FM is programmed, the word line will output a certain word line voltage V WL to the control gate of the storage element FM, and the write circuit 100 will output a c...

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Abstract

The invention relates to a write circuit and a write method for a flash memory. The invention utilizes fixed current to write the flash memory so as to adjust threshold voltage of the flash memory. When the write circuit writes the flash memory, the invention utilizes changes of drain voltage of the flash memory to judge whether the threshold voltage of the flash memory reaches the expected magnitude of voltage. Therefore, the invention can accurately adjust the threshold voltage after write and shorten write time.

Description

technical field [0001] The present invention relates to a flash memory writing circuit, and in particular to a flash memory writing circuit and writing method with a floating gate. Background technique [0002] Flash memory is lightweight and non-volatile, so it is widely used in mobile devices, such as storage devices for mobile phones, MP3 players, and digital cameras. Currently, the most widely used storage element in flash memory is mainly floating gate memory (floating gate memory), and its structure is similar to a metal oxide semiconductor transistor (MOS) with a floating gate. [0003] In the traditional technology, the writing method of floating gate memory usually sets a high voltage potential between its control gate (controlgate) and drain (drain), so that electrons are trapped (trapped) in in the floating gate. The threshold voltage of the floating gate memory will vary with the amount of electrons trapped in the floating gate. Therefore, there are mainly two...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/04G11C16/12G11C16/30G05F3/26
Inventor 许哲豪
Owner MACRONIX INT CO LTD
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