Monopole single throw microwave switch circuit based on PIN diode and its making method

A PIN diode and microwave switch technology, which is applied in the field of single-pole single-throw microwave switch circuits, can solve problems such as increased difficulty in circuit matching, deterioration of switch microwave performance, and complex peripheral control circuits, and is suitable for mass production and beneficial to radio frequency performance. The effect of simple structure

Inactive Publication Date: 2008-08-13
天津中科海高微波技术有限公司
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] 1) The additional capacitance deteriorates the microwave performance of the switch and increases the difficulty of circuit matching;
[0009] 2) The circuit structure is complex and the chip area increases
In a microwave monolithic circuit, an increase in chip area means an increase in cost;
[0010] 3) The peripheral control circuit is complex

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Monopole single throw microwave switch circuit based on PIN diode and its making method
  • Monopole single throw microwave switch circuit based on PIN diode and its making method
  • Monopole single throw microwave switch circuit based on PIN diode and its making method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0048] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0049] like image 3 as shown, image 3 The topological diagram of the SPST microwave switch circuit based on PIN diode provided by the present invention, this circuit comprises four PIN diodes (i.e. the first PIN diode D1, the second PIN diode D2, the third PIN diode D3 and the fourth PIN diode D4), three current limiting resistors (namely the first current limiting resistor R1, the second current limiting resistor R2 and the third current limiting resistor R3), two DC blocking capacitors (ie the first DC blocking capacitor C1, the second DC blocking capacitor Capacitor C2) and a voltage control terminal.

[0050] The voltage control terminal is respectively connected to the anode of the first PIN diode D1 , the anode ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the technique field of microwave circuit in micro-electronics, and discloses a single-pole single-throw (SPST) microwave switching circuit based on PIN diode, comprising four PIN diodes, three current-limiting resistors, two blocking condensers and one voltage control end; the voltage control end is connected with anode of D1, anode of D2, cathode of D3 and cathode of D4 through R1; the cathode of D1 is connected with C1 and R2 respectively; another end of C1 is connected with the input end of circuit; another end of R2 is grounded; the cathode of D2 is connected with C2 and R3 respectively; another end of C2 is connected with the output end of circuit; another end of R3 is grounded; the anode of D3 and anode of D4 are grounded respectively. The invention also discloses a preparation method of the PIN diode-based SPST microwave switching circuit. The invention improves microwave property of switching circuit, reduces match difficulty of circuit, and simplifies structure of circuit and peripheral control circuit.

Description

technical field [0001] The invention relates to the technical field of microwave circuits in microelectronics, in particular to a PIN diode-based single-pole single-throw microwave switch circuit and a manufacturing method thereof. Background technique [0002] PIN diode is the most commonly used device in microwave control circuits. It is characterized by large controllable power, small insertion loss, and good characteristics of approximate short circuit and open circuit. It can be used in switching circuits, limiters, and phase shifters. , attenuators and modulators and other control circuits. [0003] Compared with traditional Si PIN diodes, gallium arsenide (GaAs) PIN diodes have superior high-frequency characteristics, so GaAs-based PIN diode microwave switches are widely used in microwave systems. [0004] The working principle of the PIN diode in the microwave switch is its different electrical properties under different bias voltages: define the P-type layer lead-o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/74H01L21/822H01L21/768H01L21/329
Inventor 杨浩
Owner 天津中科海高微波技术有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products