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Method for forming threading hole on substrate

A technology of through holes and silicon substrates, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems such as uneven thickness and inconsistent capacitance

Active Publication Date: 2010-06-23
ADVANCED SEMICON ENG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the thickness of the insulating layer 14 on the sidewall of the trench 13 has a problem of non-uniformity, that is, the thickness of the insulating layer 14 on the sidewall above the trench 13 is different from the thickness of the insulating layer 14 on the sidewall of the trench 13. The thickness of the insulating layer 14 on the lower sidewall will not be exactly the same
As a result, the inconsistency of the capacitance

Method used

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  • Method for forming threading hole on substrate
  • Method for forming threading hole on substrate
  • Method for forming threading hole on substrate

Examples

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Embodiment Construction

[0011] refer to Figure 4 to Figure 19 , is a schematic diagram showing a first embodiment of the method for forming a through hole on a substrate according to the present invention. refer to Figure 4 and Figure 5 ,in Figure 4 is the top view of the substrate, Figure 5 for Figure 4 A cross-sectional view along line 5-5. Firstly, a substrate 2 is provided, and the substrate 2 has a first surface 21 and a second surface 22 . The substrate 2 is, for example, a silicon substrate or a wafer. Next, a first photoresist layer 23 is formed on the first surface 21 of the substrate 2 , and a first opening 231 is formed on the photoresist layer 23 . In this embodiment, the first opening 231 is circular in plan view. It can be understood that the first opening 231 may also be square in plan view.

[0012] Next, refer to Image 6 A groove 24 is formed on the substrate 2 according to the first opening 231 by etching or other methods, and the groove 24 does not penetrate the sub...

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Abstract

The invention relates to a method for forming a through hole on a base material, which includes steps: (a) providing a base material having a first surface and a second surface; (b) forming a open groove on the base material; (c) filling a conductive metal into the open groove; (d) removing part of the base material deposed at periphery of the conductive metal and retaining the conductive metal to form a containing space between the conductive metal and the base material; (e) forming a insulated material in the containing space; (f) removing part of the second surface of the base material to expose the conductive metal and the insulated material. So that, thicker insulated material is formed in the groove and has no thickness asymmetric problem.

Description

technical field [0001] The invention relates to a method for forming a through hole on a base material, in particular, relates to a method for forming an insulating layer on the side wall of the through hole on the base material by using a polymer. Background technique [0002] Referring to FIG. 1 to FIG. 3 , there are shown schematic diagrams of a conventional method for forming through holes on a substrate. First, referring to FIG. 1 , a substrate 1 is provided, and the substrate 1 has a first surface 11 and a second surface 12 . Next, several grooves 13 are formed on the first surface 11 of the substrate 1 . Next, an insulating layer 14 is formed on the sidewall of the trench 13 by chemical vapor deposition (Chemical Vapor Deposition, CVD), and a plurality of accommodating spaces 15 are formed. The insulating layer 14 is usually made of silicon dioxide. [0003] Next, referring to FIG. 2 , a conductive metal 16 is filled in the accommodating space 15 . The conductive ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L21/60
Inventor 王盟仁
Owner ADVANCED SEMICON ENG INC
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