A kind of soi structure and manufacturing method, mems device and manufacturing method

Abstract

The present invention relates to an SOI structure and a manufacturing method, and also relates to a MEMS device manufactured using the SOI structure and a method for manufacturing the MEMS device; the insulating layer of the SOI structure is mainly designed as a silicon oxide-silicon nitride-silicon oxide multilayer structure , and form a raised retaining wall structure on the silicon nitride layer. When manufacturing MEMS devices, the upper silicon dioxide layer is used as a stop layer for deep silicon etching of the isolation trench, ensuring sufficient process window for deep silicon etching , to avoid the fatal problem of short circuit caused by insufficient isolation groove etching; when removing the mask layer of the etching comb electrode and isolation groove, the VHF vapor phase etching technology in the existing process is replaced by a wet etching process , using the silicon nitride layer as a stop layer for wet etching, the silicon nitride barrier structure on both sides of the bottom of the isolation trench can effectively prevent the lateral corrosion of the insulating layer during the wet etching process, which helps to improve the isolation trench insulation effect and device reliability.

Description

Technical field [0001] The present invention relates to a semiconductor manufacturing technology, and more particularly relates to a method for producing an SOI structure and, further relates to a MEMS device formed by the SOI structure and a manufacturing method of the MEMS device. Background technique [0002] SOI (Silicon-On-Insulator) on the insulating layer of silicon that is, the technology is between the top layer and the back silicon substrate having a silicon layer of a multilayer structure introduces a buried oxide layer is formed. Due to the unique advantages of SOI structures, devices based on this structure will be essentially reduced junction capacitance and leakage current, increase switching speed, lower power consumption, high speed, low power operation, which is superior to bulk silicon devices and circuit. SOI structure currently used for manufacturing most of the devices have been widely used in the field of microelectronics, optoelectronics while still other ...

AI Technical Summary

Problems solved by technology

If the patent figure 1 The insulating layer structure shown is used to solve the problem of poor insulation of the isolation trench of MEMS devices, but it still cannot avoid the problem of lateral corrosion of the oxide layer at the bottom of both sides of the isolation trench during the etching process, and the reliability of the device cannot be effectively improved.

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