Unlock instant, AI-driven research and patent intelligence for your innovation.

Lithographic apparatus and method

A technology of lithography equipment and optical elements, applied in the field of projection systems, can solve problems such as uneven heating of lens elements and deformation of refractive index

Active Publication Date: 2008-11-05
ASML HLDG NV
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This causes the lens elements to be heated inhomogeneously by the radiation beam, leading to local changes in the refractive index and deformation of the lens elements

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lithographic apparatus and method
  • Lithographic apparatus and method
  • Lithographic apparatus and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] Although specific reference may be made herein to the use of the lithographic apparatus for the fabrication of ICs, it should be understood that the lithographic apparatus described herein may have other applications, for example, integrated optical systems, guiding and detection patterns for magnetic domain memories, Manufacture of liquid crystal displays, thin-film magnetic heads, etc. It will be understood by those of ordinary skill that, in the context of this alternative application, any term "wafer" or "chip" used therein may be considered to be synonymous with the more general terms "substrate" or "chip", respectively. target section" synonymous. The substrate referred to here can be processed before or after exposure, such as in a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist) , measurement tool, or inspection tool. Where applicable, the disclosure herein may be employed in this and other substrate proces...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A projection system suitable for use in a lithographic apparatus, the projection system including a transmissive optical element and a thermal profile corrector configured to change a thermal profile of the transmissive optical element, the thermal profile corrector including a transfer member and a thermal profile conditioner, the transfer member being moveable into and out of proximity with the transmissive optical element to transfer a desired thermal profile from the thermal profile conditioner into the transmissive optical element.

Description

technical field [0001] The invention relates to a projection system for a lithographic apparatus, a lithographic apparatus and a method. Background technique [0002] A lithographic apparatus is a machine that applies a desired pattern onto a target portion of a substrate. For example, lithographic equipment may be used in the manufacture of integrated circuits (ICs). In this case, a patterning device, optionally called a mask or reticle, can be used to generate a circuit pattern corresponding to a single layer of the IC that can be imaged onto a target portion of a substrate (e.g., a silicon wafer) (eg, comprising a portion, one or more chips), the substrate has a layer of radiation-sensitive material (resist). Typically, a single substrate will contain a network of adjacent target portions that are sequentially exposed. Known lithographic apparatuses include: so-called steppers, in which each target portion is irradiated by exposing the entire pattern onto the target po...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/70891G03F7/70308
Inventor 斯蒂芬·鲁克斯
Owner ASML HLDG NV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com