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Exposure equipment, exposure method, and manufacturing method for a semiconductor device

A technology of an exposure device and an exposure method, applied in the field of exposure devices, can solve the problems of difficulty in obtaining resolution, inability to obtain the deformation amount of a mask, etc., and achieve the effect of good resolution

Inactive Publication Date: 2009-02-11
NEC ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is required to form rod-shaped periodic patterns and linear marks on the reticle, and it is difficult to obtain excellent resolution because the amount of reticle deformation cannot be obtained with a commonly used reticle

Method used

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  • Exposure equipment, exposure method, and manufacturing method for a semiconductor device
  • Exposure equipment, exposure method, and manufacturing method for a semiconductor device
  • Exposure equipment, exposure method, and manufacturing method for a semiconductor device

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no. 1 approach

[0030] refer to figure 1 Up to FIG. 9 , the exposure apparatus according to the first embodiment of the present invention is described as follows.

[0031] The structure of the exposure apparatus 100 is as follows.

[0032] figure 1 is a cross-sectional view of the exposure apparatus according to this embodiment. Such as figure 1 As shown, the exposure apparatus 100 of the present embodiment includes an optical system (not shown) for projecting the pattern formed on the surface of the mask 101 onto the wafer 130, light emitting devices 110 each serving as a measurement section , a light receiving device 120 and a control device 150 , a wafer stage 131 used as an adjustment unit, a mask 101 placed on a mask holder 102 , and a reduction projection lens 160 .

[0033] In the exposure apparatus 100, exposure light emitted from an optical system passes through a reticle 101 and a reduction projection lens 160 to project a pattern formed on the surface of the reticle 101 onto...

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Abstract

Provided is an exposure equipment having high resolution even when a reticle is inclined. The exposure equipment includes: an optical system for projecting on a wafer (130), a pattern formed on a surface of a reticle (101); a determining section for determining a tilt angle of the reticle (101) with respect to a plane perpendicular to an optical axis direction of the optical system; and an adjusting section for adjusting a position of the wafer (130) based on the tilt angle determined by the determining section.

Description

technical field [0001] The present invention relates to an exposure device, an exposure method, and a method for manufacturing a semiconductor device. Background technique [0002] JP 11-340125 A discloses a step and repeat exposure device. Such as Figure 10 As shown, in the exposure apparatus described in JP11-340125 A, the sample stage 11 is set on the XY stage 13 by the Z driving parts 12A to 12C, and the wafer W is set by the wafer holder (holder) 10. Hold on the sample stage 11 to transfer the pattern of the reticle R on the wafer W. Before the exposure, the inclination angles Itx and Ity of the imaging surface 22 of the projection optical system PL with respect to the running plane 14a of the XY stage 13 are measured. During the exposure process, when the XY stage 13 is gradually moved, for example, based on the inclination angle of the imaging surface 22 and the position of the XY stage 13, the amount of expansion and contraction of the Z drive sections 12A to 12C ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20H01L21/027
CPCG03F9/7034G03F9/7023
Inventor 林省一郎
Owner NEC ELECTRONICS CORP