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Wafer-class encapsulation structure and preparation method thereof

A technology of wafer-level packaging and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problem of poor elasticity of metal bumps, damage to electrical connections between bumps and pads, and reduced Problems such as the reliability of the electrical connection between the chip package and the carrier board, to achieve the effect of improving reliability and reducing stress

Inactive Publication Date: 2011-06-15
CHIPMOS TECHSHANGHAI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the elasticity of the metal bump is poor. When the electrical connection between the bump and the pad is under stress, the metal bump cannot be used as a buffer, so the electrical connection between the bump and the pad is easily damaged.
In this way, the reliability of the electrical connection between the bump and the pad will be reduced, thereby reducing the reliability of the electrical connection between the chip package and the carrier.

Method used

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  • Wafer-class encapsulation structure and preparation method thereof
  • Wafer-class encapsulation structure and preparation method thereof
  • Wafer-class encapsulation structure and preparation method thereof

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Embodiment Construction

[0042] Figure 1A to Figure 1J It is a flowchart of a manufacturing method of a wafer-level package structure according to an embodiment of the present invention. Please refer to Figure 1A to Figure 1J The manufacturing method of the wafer-level packaging structure of the present invention includes the following steps. First, please refer to Figure 1A Provide a wafer 100 including a plurality of chips 100a (only one chip 100a is shown in the figure), wherein each chip 100a has a plurality of bonding pads 110a and a protective layer 120a, and the protective layer 120a has a plurality of first openings 122a , And the first opening 122a exposes a part of the bonding pad 110a.

[0043] Next, please refer to Figure 1B , A ball bottom metal layer 130 is formed on each pad 110a (see Figure 1I and Figure 1J ). The above-mentioned method of forming the ball bottom metal layer 130 can form a full-covered metal layer 130 on the surface of the wafer 100 by electroplating, and then patter...

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Abstract

The invention relates to a wafer-level packaging structure which comprises a chip, a plurality of ball bottom metal layers and a plurality of polymer projections. The chip is provided with a plurality of welding pads and a protection layer, wherein the protection layer is provided with a plurality of first openings to expose the welding pads. The ball bottom layer covers the exposed welding pads by the protection layer. The polymer projections is configured on the ball bottom metal layer. Each polymer projection comprises a polymer layer, at least a conductive pillar and a junction layer. The polymer layer is provided with at least a through hole. The conductive pillar is configured in the through hole and the junction layer covers the conductive pillar. The polymer layer is electrically connected with the corresponding welding pads through the conductive pillar. The polymer layer is higher than the conductive pillar, and the junction layer above the conductive pillar is provided with a depression. According to the invention, the reliability of the electric connection between a chip package body and a carrier plate can be improved.

Description

Technical field [0001] The invention relates to a packaging structure and a manufacturing method thereof, and more particularly to a wafer-level packaging structure and a manufacturing method thereof. Background technique [0002] In recent years, as the growth of portable electronic products, handheld communications and consumer electronic products has surpassed that of traditional personal computer (PC) products, electronic components have continued to move towards high-capacity, narrow-line width High-density, high frequency, low energy consumption, and multi-functional integration are developing. In terms of integrated circuit (IC) packaging technology, in order to meet the requirements of high input / output (I / O), high heat dissipation and reduced package size, chip scale package (CSP) The demand for high-end packaging technologies such as wafer level package is increasing. [0003] Different from the traditional packaging technology that uses a single die as a processing tar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/485H01L21/60
CPCH01L2224/11
Inventor 马俊赖金榜
Owner CHIPMOS TECHSHANGHAI