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Semi-conductor light emitting component having high cooling efficiency and manufacturing method therefor

A technology of light-emitting components and semiconductors, applied in semiconductor devices, electrical components, circuits, etc., can solve problems affecting the reliability and service life of light-emitting diodes, increase heat generation, and high manufacturing costs, and achieve reliability and service life. Efficiency improvement and low manufacturing cost

Active Publication Date: 2010-04-21
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

compared to Figure 1A The light-emitting diode in the light-emitting diode, the advantage of this light-emitting diode is better heat dissipation, but its manufacturing cost is higher
[0006] With the evolution of technology, while the brightness of light-emitting diodes is getting higher and higher, it also causes an increase in heat generation, which affects the reliability and service life of light-emitting diodes

Method used

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  • Semi-conductor light emitting component having high cooling efficiency and manufacturing method therefor
  • Semi-conductor light emitting component having high cooling efficiency and manufacturing method therefor
  • Semi-conductor light emitting component having high cooling efficiency and manufacturing method therefor

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Experimental program
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Embodiment Construction

[0021] see figure 2 , figure 2 It is a cross-sectional view of the semiconductor light emitting component 3 of a preferred embodiment of the present invention. In this preferred embodiment, the semiconductor light-emitting component 3 is a light-emitting diode as an example, but it is not limited thereto.

[0022] The semiconductor light emitting element 3 includes a substrate 30 , a multilayer structure 32 , a first electrode structure 34 and a second electrode structure 36 .

[0023] In practical applications, the substrate 30 can be glass (SiO 2 ), silicon (Si), germanium (Ge), gallium nitride (GaN), gallium arsenide (GaAs), gallium phosphide (GaP), aluminum nitride (AlN), sapphire (sapphire), spinel (spinnel ), aluminum oxide (Al 2 o 3 ), silicon carbide (SiC), zinc oxide (ZnO), magnesium oxide (MgO), lithium aluminum dioxide (LiAlO 2 ), lithium gallium dioxide (LiGaO 2 ) or Magnesium Tetroxide (MgAl 2 o 4 ).

[0024] The substrate 30 has an upper surface 300 a...

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Abstract

The invention relates to a semiconductor light-emitting assembly and a production method. The semiconductor light-emitting assembly of the invention comprises a base plate, a multi-layer structure, afirst electrode structure and a second electrode structure, wherein the base plate is provided with an upper surface and a lower surface, and further comprises at least a through-hole, wherein at leastone through-hole is filled by heat conductive material. The multi-layer structure is formed on the upper surface of the base plate, and comprises a light-emitting region, the first electrode structur e is formed on the multi-layer structure, and the second electrode structure is formed on the lower surface of the base plate. Especially, heat energy which is triggered by the semiconductor light-emitting assembly when in operation is conducted to the heat conductive material, and then is diverged by the heat conductive material.

Description

technical field [0001] The invention relates to a semiconductor light-emitting device, in particular to a semiconductor light-emitting device with high heat dissipation efficiency. Background technique [0002] Nowadays, semiconductor light-emitting components (such as light-emitting diodes) have been widely used in applications such as button systems, mobile phone screen backlight modules, vehicle lighting systems, decorative lighting and remote control products, and semiconductor light-emitting components are widely used. . [0003] Light-emitting diodes can be roughly divided into blue light, green light-emitting diodes, red light, and yellow light-emitting diodes if they are distinguished by the color of the emitted light source. The electrodes of the blue light and green light emitting diodes are arranged on the same side of the light emitting diodes, while the electrodes of the red light and yellow light emitting diodes are arranged on both sides of the light emitting...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/64
Inventor 邱舒伟
Owner EPISTAR CORP