Processing method of brittle material substrate
Patent Information
- Authority / Receiving Office
- CN Β· China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- MITSUBOSHI DIAMOND IND CO LTD
- Publication Date
- 2009-04-01
- Estimated Expiration
- Not applicable Β· inactive patent
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The present invention relates to a processing method of a brittle material substrate that forms cracks by thermal stress (tensile stress) generated on the substrate by locally heating the brittle material substrate with a laser beam and then cooling the heated portion.
[0002] Here, the brittle material substrate refers to glass substrates, ceramics of sintered materials, single crystal silicon, semiconductor chips, sapphire substrates, ceramic substrates, and the like.
[0003] In addition, the "crack" is a scribe line when the front end in the depth direction does not reach the back surface of the substrate, and becomes a cutting line (full cut line) after reaching the back surface of the substrate. The scribe line is divided by performing a breaking process that applies a bending moment along the scribe line, or by applying a post-process that further infiltrates the crack into the depth of the substrate.
[0004] In addition, in the following descr...