Processing method of brittle material substrate

A technology of brittle material substrates and processing methods, applied in stone processing equipment, metal processing equipment, fine working devices, etc., can solve problems such as insufficient crack position control

Inactive Publication Date: 2009-04-01
MITSUBOSHI DIAMOND IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0025] When the crack is deepened by the method described in Patent Document 4, the crack can be stably formed and infiltrated compared with the case where the auxiliary cooling point does not function, but the controllability of the crack position in the width direction of the beam spot Insufficient, it is difficult to correctly align the crack position with the planned dividing line

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  • Processing method of brittle material substrate
  • Processing method of brittle material substrate
  • Processing method of brittle material substrate

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Embodiment Construction

[0049] Embodiments of the present invention will be described below based on the drawings. figure 1 It is a structural schematic diagram of the substrate processing apparatus LS1 which is one embodiment of this invention. Here, the case of processing a glass substrate will be described as an example.

[0050] First, the overall configuration of the substrate processing apparatus LS1 will be described. The substrate processing apparatus LS1 is provided with a slide table 2 that is positioned along a pair of guide rails 3 and 4 arranged in parallel on the horizontal stage 1. figure 1 The front and rear direction of the paper (hereinafter referred to as the Y direction) reciprocates. A lead screw (skullu-neji) 5 is arranged between the two guide rails 3, 4 along the front-rear direction, and the strut 6 fixed on the above-mentioned sliding table 2 is screwed on the lead screw 5, and is driven by a motor (not shown). (shown) make the lead screw 5 forward and reverse, and the sl...

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Abstract

The present invention provides a method for processing substrate made of brittle material. A crackle which penetrates into the inner part of substrate can be reliably formed at the correct position along a preset dividing line. The method for processing substrate made of brittle material uses a heating step and a cooling step for forming the crackle. The heating is executed with a mode that the beam spot (BS) moves relatively along the preset dividing line (P) according to the heating step. The cooling is executed with a mode that the cooling spot moves relatively along the track for scanningthe beam spots according to the cooling step. The cooling step comprises the following procedures executed sequentially: (a) a first cooling procedure for relatively moving the first cooling spot (CS1) which is reduced to smaller than the width of beam spots along with the beam spot thereby extending the shallow crackle (S2); and (b) a second cooling procedure for relatively moving the second cooling spot (CS2) which is extended to larger than the width of the beam spot along with the track for scanning the first cooling point, thereby penetrating the shallow crackle formed beforehand in the thickness direction of substrate.

Description

technical field [0001] The present invention relates to a processing method of a brittle material substrate that forms cracks by thermal stress (tensile stress) generated on the substrate by locally heating the brittle material substrate with a laser beam and then cooling the heated portion. [0002] Here, the brittle material substrate refers to glass substrates, ceramics of sintered materials, single crystal silicon, semiconductor chips, sapphire substrates, ceramic substrates, and the like. [0003] In addition, the "crack" is a scribe line when the front end in the depth direction does not reach the back surface of the substrate, and becomes a cutting line (full cut line) after reaching the back surface of the substrate. The scribe line is divided by performing a breaking process that applies a bending moment along the scribe line, or by applying a post-process that further infiltrates the crack into the depth of the substrate. [0004] In addition, in the following descr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K26/40C03B33/09B28D5/00C04B41/80H01L21/301
CPCC03B33/0222C03B33/027C03B33/033C03B33/091C03B33/102Y02P40/57
Inventor 井村淳史
Owner MITSUBOSHI DIAMOND IND CO LTD
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